volume 16 issue 5 pages 433-436

Tetrathiafulvalene derivatives for organic field effect transistors

Publication typeJournal Article
Publication date2006-01-01
scimago Q1
wos Q1
SJR2.462
CiteScore16.7
Impact factor9.5
ISSN20507488, 20507496, 09599428, 13645501
Materials Chemistry
General Chemistry
Abstract
Great interest in organic field-effect transistors (OFETs) has emerged in the last years due to their potential applications. Here we highlight the very recent use of tetrathiafulvalene derivatives for fabricating OFETs either from vacuum deposition or from solution. These materials are extremely promising owing to their facile processability and high device performance.
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GOST |
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GOST Copy
Mas-Torrent M., Rovira C. Tetrathiafulvalene derivatives for organic field effect transistors // Journal of Materials Chemistry A. 2006. Vol. 16. No. 5. pp. 433-436.
GOST all authors (up to 50) Copy
Mas-Torrent M., Rovira C. Tetrathiafulvalene derivatives for organic field effect transistors // Journal of Materials Chemistry A. 2006. Vol. 16. No. 5. pp. 433-436.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1039/b510121b
UR - https://doi.org/10.1039/b510121b
TI - Tetrathiafulvalene derivatives for organic field effect transistors
T2 - Journal of Materials Chemistry A
AU - Mas-Torrent, Marta
AU - Rovira, Concepcio
PY - 2006
DA - 2006/01/01
PB - Royal Society of Chemistry (RSC)
SP - 433-436
IS - 5
VL - 16
SN - 2050-7488
SN - 2050-7496
SN - 0959-9428
SN - 1364-5501
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2006_Mas-Torrent,
author = {Marta Mas-Torrent and Concepcio Rovira},
title = {Tetrathiafulvalene derivatives for organic field effect transistors},
journal = {Journal of Materials Chemistry A},
year = {2006},
volume = {16},
publisher = {Royal Society of Chemistry (RSC)},
month = {jan},
url = {https://doi.org/10.1039/b510121b},
number = {5},
pages = {433--436},
doi = {10.1039/b510121b}
}
MLA
Cite this
MLA Copy
Mas-Torrent, Marta, and Concepcio Rovira. “Tetrathiafulvalene derivatives for organic field effect transistors.” Journal of Materials Chemistry A, vol. 16, no. 5, Jan. 2006, pp. 433-436. https://doi.org/10.1039/b510121b.