Origin of surface trap states in CdS quantum dots: relationship between size dependent photoluminescence and sulfur vacancy trap states
Aisea Veamatahau
1
,
Bo Jiang
1
,
Tom S. Seifert
1
,
Satoshi MAKUTA
1
,
Kay Latham
2
,
Masayuki Kanehara
3
,
Toshiharu Teranishi
4
,
Yasuhiro Tachibana
1, 5, 6
Publication type: Journal Article
Publication date: 2015-01-01
scimago Q2
wos Q2
SJR: 0.698
CiteScore: 5.3
Impact factor: 2.9
ISSN: 14639076, 14639084
PubMed ID:
25501442
Physical and Theoretical Chemistry
General Physics and Astronomy
Abstract
Trap state emission mainly originates from deep trapped electrons at surface Cd with sulfur vacancy sites of CdS quantum dot.
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Metrics
229
Total citations:
229
Citations from 2025:
18
(7.9%)
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Veamatahau A. et al. Origin of surface trap states in CdS quantum dots: relationship between size dependent photoluminescence and sulfur vacancy trap states // Physical Chemistry Chemical Physics. 2015. Vol. 17. No. 4. pp. 2850-2858.
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Veamatahau A., Jiang B., Seifert T. S., MAKUTA S., Latham K., Kanehara M., Teranishi T., Tachibana Y. Origin of surface trap states in CdS quantum dots: relationship between size dependent photoluminescence and sulfur vacancy trap states // Physical Chemistry Chemical Physics. 2015. Vol. 17. No. 4. pp. 2850-2858.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1039/c4cp04761c
UR - https://doi.org/10.1039/c4cp04761c
TI - Origin of surface trap states in CdS quantum dots: relationship between size dependent photoluminescence and sulfur vacancy trap states
T2 - Physical Chemistry Chemical Physics
AU - Veamatahau, Aisea
AU - Jiang, Bo
AU - Seifert, Tom S.
AU - MAKUTA, Satoshi
AU - Latham, Kay
AU - Kanehara, Masayuki
AU - Teranishi, Toshiharu
AU - Tachibana, Yasuhiro
PY - 2015
DA - 2015/01/01
PB - Royal Society of Chemistry (RSC)
SP - 2850-2858
IS - 4
VL - 17
PMID - 25501442
SN - 1463-9076
SN - 1463-9084
ER -
Cite this
BibTex (up to 50 authors)
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@article{2015_Veamatahau,
author = {Aisea Veamatahau and Bo Jiang and Tom S. Seifert and Satoshi MAKUTA and Kay Latham and Masayuki Kanehara and Toshiharu Teranishi and Yasuhiro Tachibana},
title = {Origin of surface trap states in CdS quantum dots: relationship between size dependent photoluminescence and sulfur vacancy trap states},
journal = {Physical Chemistry Chemical Physics},
year = {2015},
volume = {17},
publisher = {Royal Society of Chemistry (RSC)},
month = {jan},
url = {https://doi.org/10.1039/c4cp04761c},
number = {4},
pages = {2850--2858},
doi = {10.1039/c4cp04761c}
}
Cite this
MLA
Copy
Veamatahau, Aisea, et al. “Origin of surface trap states in CdS quantum dots: relationship between size dependent photoluminescence and sulfur vacancy trap states.” Physical Chemistry Chemical Physics, vol. 17, no. 4, Jan. 2015, pp. 2850-2858. https://doi.org/10.1039/c4cp04761c.