Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors
Sankalp Koduvayur Ganeshan
1, 2, 3, 4, 5
,
Venkatarao Selamneni
1, 2, 3, 4, 5
,
Parikshit Sahatiya
1, 2, 3, 4, 5
2
Department of Electrical and Electronics Engineering
3
Birla Institute of Technology and Science Pilani Hyderabad Campus
|
4
Hyderabad 500078
5
INDIA
|
Publication type: Journal Article
Publication date: 2020-06-03
scimago Q2
wos Q3
SJR: 0.493
CiteScore: 5.0
Impact factor: 2.5
ISSN: 11440546, 13699261
Materials Chemistry
General Chemistry
Catalysis
Abstract
This report demonstrates the fabrication of a flexible, water-soluble MoS2 QDs/PVA (polyvinyl alcohol) film sandwiched between Cu electrodes as a resistive memory. The active material film (MoS2 QD/PVA) of the device exhibited outstanding water solubility, dissolving the active material completely in ∼180 s, making it a promising candidate for transient/destructible memories. The device exhibited significant merits with an ON/OFF ratio of ∼150 with good cycling stability, excellent reproducibility, and data retention capability up to 1000 cycles. The memristive phenomena can be accounted for by the charge trapping, de-trapping, and quantum tunneling effects observed in nanoscale MoS2 QDs. The successful fabrication of the water-soluble MoS2 QDs/PVA resistive RAM opens up new avenues and opportunities for the development of transient memory in the fields of military, security devices, and intelligence applications.
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Total citations:
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Citations from 2024:
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GOST
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Koduvayur Ganeshan S. et al. Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors // New Journal of Chemistry. 2020. Vol. 44. No. 28. pp. 11941-11948.
GOST all authors (up to 50)
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Koduvayur Ganeshan S., Selamneni V., Sahatiya P. Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors // New Journal of Chemistry. 2020. Vol. 44. No. 28. pp. 11941-11948.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1039/d0nj02053b
UR - https://xlink.rsc.org/?DOI=D0NJ02053B
TI - Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors
T2 - New Journal of Chemistry
AU - Koduvayur Ganeshan, Sankalp
AU - Selamneni, Venkatarao
AU - Sahatiya, Parikshit
PY - 2020
DA - 2020/06/03
PB - Royal Society of Chemistry (RSC)
SP - 11941-11948
IS - 28
VL - 44
SN - 1144-0546
SN - 1369-9261
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2020_Koduvayur Ganeshan,
author = {Sankalp Koduvayur Ganeshan and Venkatarao Selamneni and Parikshit Sahatiya},
title = {Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors},
journal = {New Journal of Chemistry},
year = {2020},
volume = {44},
publisher = {Royal Society of Chemistry (RSC)},
month = {jun},
url = {https://xlink.rsc.org/?DOI=D0NJ02053B},
number = {28},
pages = {11941--11948},
doi = {10.1039/d0nj02053b}
}
Cite this
MLA
Copy
Koduvayur Ganeshan, Sankalp, et al. “Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors.” New Journal of Chemistry, vol. 44, no. 28, Jun. 2020, pp. 11941-11948. https://xlink.rsc.org/?DOI=D0NJ02053B.