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Electronics Letters, volume 36, issue 16, pages 1384

InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

J.A. LOTT ¹

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Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright Patterson Afb, OH, USA |

Publication type: Journal Article

Publication date: 2002-07-26

Institution of Engineering and Technology (IET)

Journal: Electronics Letters

scimago Q3

wos Q4

SJR: 0.323

CiteScore: 2.7

Impact factor: 0.7

ISSN: 00135194, 1350911X

DOI: 10.1049/el:20000988

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Electrical and Electronic Engineering

Abstract

Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaAs substrates and when fabricated include selectively oxidised AlO current apertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at room temperature with threshold currents below 2 mA and differential slope efficiencies above 40%.

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LOTT J. et al. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m // Electronics Letters. 2002. Vol. 36. No. 16. p. 1384.

GOST all authors (up to 50) Copy

LOTT J. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m // Electronics Letters. 2002. Vol. 36. No. 16. p. 1384.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1049/el:20000988

UR - https://doi.org/10.1049/el:20000988

TI - InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

T2 - Electronics Letters

AU - LOTT, J.A.

PY - 2002

DA - 2002/07/26

PB - Institution of Engineering and Technology (IET)

SP - 1384

IS - 16

VL - 36

SN - 0013-5194

SN - 1350-911X

ER -

BibTex |

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@article{2002_LOTT,

author = {J.A. LOTT},

title = {InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m},

journal = {Electronics Letters},

year = {2002},

volume = {36},

publisher = {Institution of Engineering and Technology (IET)},

month = {jul},

url = {https://doi.org/10.1049/el:20000988},

number = {16},

pages = {1384},

doi = {10.1049/el:20000988}

}

MLA

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MLA Copy

LOTT, J.A., et al. “InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m.” Electronics Letters, vol. 36, no. 16, Jul. 2002, p. 1384. https://doi.org/10.1049/el:20000988.

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Publisher

Institution of Engineering and Technology (IET)

Journal

Electronics Letters

scimago Q3

wos Q4

SJR

0.323

CiteScore

2.7

Impact factor

0.7

ISSN

00135194 (Print)

1350911X (Electronic)

Profiles

Maximov, M V