Applied Physics Letters, volume 68, issue 23, pages 3284-3286

Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

F. Heinrichsdorff ¹

A. Krost ¹

M. GRUNDMANN ¹

D. BIMBERG ¹

A Kosogov ²

P. Werner ²

Show full list: 6 authors

Hide authors affiliations Show authors affiliations: 2 affiliations

Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany |

Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany |

Publication type: Journal Article

Publication date: 1996-06-03

AIP Publishing

Journal: Applied Physics Letters

scimago Q1

wos Q2

SJR: 0.976

CiteScore: 6.4

Impact factor: 3.5

ISSN: 00036951, 10773118

DOI: 10.1063/1.116575

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Physics and Astronomy (miscellaneous)

Abstract

In0.5Ga0.5As/GaAs (001) quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) on exactly (001) oriented substrates using the Stranski–Krastanow growth mode. The dot density and their relative geometrical arrangement are found to be strongly dependent on the substrate temperature. The dots have identical square shaped bases oriented along 〈100〉. For high densities a preferential relative alignment of the dots along the 〈110〉 directions is found. These dots tend to be arranged in a chainlike pattern with decreasing dot size towards the ends of the chains. From these observations the dot formation process for In0.5Ga0.5As quantum dots is suggested to be driven by energetics whereas the relative orientation is governed by kinetic effects.

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90 Total citations

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Heinrichsdorff F. et al. Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1996. Vol. 68. No. 23. pp. 3284-3286.

GOST all authors (up to 50) Copy

Heinrichsdorff F., Krost A., GRUNDMANN M., BIMBERG D., Kosogov A., Werner P. Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1996. Vol. 68. No. 23. pp. 3284-3286.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.116575

UR - https://doi.org/10.1063/1.116575

TI - Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

T2 - Applied Physics Letters

AU - Heinrichsdorff, F.

AU - Krost, A.

AU - GRUNDMANN, M.

AU - BIMBERG, D.

AU - Kosogov, A

AU - Werner, P.

PY - 1996

DA - 1996/06/03

PB - AIP Publishing

SP - 3284-3286

IS - 23

VL - 68

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

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@article{1996_Heinrichsdorff,

author = {F. Heinrichsdorff and A. Krost and M. GRUNDMANN and D. BIMBERG and A Kosogov and P. Werner},

title = {Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition},

journal = {Applied Physics Letters},

year = {1996},

volume = {68},

publisher = {AIP Publishing},

month = {jun},

url = {https://doi.org/10.1063/1.116575},

number = {23},

pages = {3284--3286},

doi = {10.1063/1.116575}

}

MLA

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MLA Copy

Heinrichsdorff, F., et al. “Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition.” Applied Physics Letters, vol. 68, no. 23, Jun. 1996, pp. 3284-3286. https://doi.org/10.1063/1.116575.

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Publisher

AIP Publishing

Journal

Applied Physics Letters

scimago Q1

wos Q2

SJR

0.976

CiteScore

6.4

Impact factor

3.5

ISSN

00036951 (Print)

10773118 (Electronic)