volume 71 issue 1 pages 22-24

Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Publication typeJournal Article
Publication date1997-07-07
scimago Q1
wos Q2
SJR0.896
CiteScore6.1
Impact factor3.6
ISSN00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract

We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high lateral density (dl⩾4×1010 cm−2) was achieved in a narrow growth parameter window. The room-temperature photoluminescence (PL) intensity is enhanced up to a factor of 3 and the PL peak width is reduced by more than 30% when a thin layer of In0.3Ga0.7As is deposited onto the InAs QDs. A QD laser with a single sheet of such InAs/InGaAs/GaAs QDs exhibits threshold current densities as low as 12.7 and 181 A/cm2 at 100 and 300 K, respectively. Lasers with threefold stacked QDs show ground-state lasing and allow for cw operation at room temperature.

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GOST |
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GOST Copy
Heinrichsdorff F. et al. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1997. Vol. 71. No. 1. pp. 22-24.
GOST all authors (up to 50) Copy
Heinrichsdorff F., Mao M. H., Kirstaedter N., Krost A., BIMBERG D., Kosogov A. O., Werner P. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1997. Vol. 71. No. 1. pp. 22-24.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1063/1.120556
UR - https://doi.org/10.1063/1.120556
TI - Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
T2 - Applied Physics Letters
AU - Heinrichsdorff, F.
AU - Mao, M H
AU - Kirstaedter, N.
AU - Krost, A.
AU - BIMBERG, D.
AU - Kosogov, A. O.
AU - Werner, P.
PY - 1997
DA - 1997/07/07
PB - AIP Publishing
SP - 22-24
IS - 1
VL - 71
SN - 0003-6951
SN - 1077-3118
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{1997_Heinrichsdorff,
author = {F. Heinrichsdorff and M H Mao and N. Kirstaedter and A. Krost and D. BIMBERG and A. O. Kosogov and P. Werner},
title = {Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition},
journal = {Applied Physics Letters},
year = {1997},
volume = {71},
publisher = {AIP Publishing},
month = {jul},
url = {https://doi.org/10.1063/1.120556},
number = {1},
pages = {22--24},
doi = {10.1063/1.120556}
}
MLA
Cite this
MLA Copy
Heinrichsdorff, F., et al. “Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition.” Applied Physics Letters, vol. 71, no. 1, Jul. 1997, pp. 22-24. https://doi.org/10.1063/1.120556.