Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Publication type: Journal Article
Publication date: 1997-07-07
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
DOI:
10.1063/1.120556
Physics and Astronomy (miscellaneous)
Abstract
We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high lateral density (dl⩾4×1010 cm−2) was achieved in a narrow growth parameter window. The room-temperature photoluminescence (PL) intensity is enhanced up to a factor of 3 and the PL peak width is reduced by more than 30% when a thin layer of In0.3Ga0.7As is deposited onto the InAs QDs. A QD laser with a single sheet of such InAs/InGaAs/GaAs QDs exhibits threshold current densities as low as 12.7 and 181 A/cm2 at 100 and 300 K, respectively. Lasers with threefold stacked QDs show ground-state lasing and allow for cw operation at room temperature.
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Total citations:
291
Citations from 2024:
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(0.69%)
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Heinrichsdorff F. et al. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1997. Vol. 71. No. 1. pp. 22-24.
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Heinrichsdorff F., Mao M. H., Kirstaedter N., Krost A., BIMBERG D., Kosogov A. O., Werner P. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1997. Vol. 71. No. 1. pp. 22-24.
Cite this
RIS
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TY - JOUR
DO - 10.1063/1.120556
UR - https://doi.org/10.1063/1.120556
TI - Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
T2 - Applied Physics Letters
AU - Heinrichsdorff, F.
AU - Mao, M H
AU - Kirstaedter, N.
AU - Krost, A.
AU - BIMBERG, D.
AU - Kosogov, A. O.
AU - Werner, P.
PY - 1997
DA - 1997/07/07
PB - AIP Publishing
SP - 22-24
IS - 1
VL - 71
SN - 0003-6951
SN - 1077-3118
ER -
Cite this
BibTex (up to 50 authors)
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@article{1997_Heinrichsdorff,
author = {F. Heinrichsdorff and M H Mao and N. Kirstaedter and A. Krost and D. BIMBERG and A. O. Kosogov and P. Werner},
title = {Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition},
journal = {Applied Physics Letters},
year = {1997},
volume = {71},
publisher = {AIP Publishing},
month = {jul},
url = {https://doi.org/10.1063/1.120556},
number = {1},
pages = {22--24},
doi = {10.1063/1.120556}
}
Cite this
MLA
Copy
Heinrichsdorff, F., et al. “Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition.” Applied Physics Letters, vol. 71, no. 1, Jul. 1997, pp. 22-24. https://doi.org/10.1063/1.120556.