Applied Physics Letters, volume 71, issue 1, pages 22-24

Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

F. Heinrichsdorff ¹

M H Mao ¹

N. Kirstaedter ¹

A. Krost ¹

D. BIMBERG ¹

A. O. Kosogov ²

P. Werner ²

Show full list: 7 authors

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Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany |

Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle, Germany |

Publication type: Journal Article

Publication date: 1997-07-07

AIP Publishing

Journal: Applied Physics Letters

scimago Q1

wos Q2

SJR: 0.976

CiteScore: 6.4

Impact factor: 3.5

ISSN: 00036951, 10773118

DOI: 10.1063/1.120556

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Physics and Astronomy (miscellaneous)

Abstract

We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high lateral density (dl⩾4×1010 cm−2) was achieved in a narrow growth parameter window. The room-temperature photoluminescence (PL) intensity is enhanced up to a factor of 3 and the PL peak width is reduced by more than 30% when a thin layer of In0.3Ga0.7As is deposited onto the InAs QDs. A QD laser with a single sheet of such InAs/InGaAs/GaAs QDs exhibits threshold current densities as low as 12.7 and 181 A/cm2 at 100 and 300 K, respectively. Lasers with threefold stacked QDs show ground-state lasing and allow for cw operation at room temperature.

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Heinrichsdorff F. et al. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1997. Vol. 71. No. 1. pp. 22-24.

GOST all authors (up to 50) Copy

Heinrichsdorff F., Mao M. H., Kirstaedter N., Krost A., BIMBERG D., Kosogov A. O., Werner P. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition // Applied Physics Letters. 1997. Vol. 71. No. 1. pp. 22-24.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.120556

UR - https://doi.org/10.1063/1.120556

TI - Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

T2 - Applied Physics Letters

AU - Heinrichsdorff, F.

AU - Mao, M H

AU - Kirstaedter, N.

AU - Krost, A.

AU - BIMBERG, D.

AU - Kosogov, A. O.

AU - Werner, P.

PY - 1997

DA - 1997/07/07

PB - AIP Publishing

SP - 22-24

IS - 1

VL - 71

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

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@article{1997_Heinrichsdorff,

author = {F. Heinrichsdorff and M H Mao and N. Kirstaedter and A. Krost and D. BIMBERG and A. O. Kosogov and P. Werner},

title = {Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition},

journal = {Applied Physics Letters},

year = {1997},

volume = {71},

publisher = {AIP Publishing},

month = {jul},

url = {https://doi.org/10.1063/1.120556},

number = {1},

pages = {22--24},

doi = {10.1063/1.120556}

}

MLA

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MLA Copy

Heinrichsdorff, F., et al. “Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition.” Applied Physics Letters, vol. 71, no. 1, Jul. 1997, pp. 22-24. https://doi.org/10.1063/1.120556.

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Publisher

AIP Publishing

Journal

Applied Physics Letters

scimago Q1

wos Q2

SJR

0.976

CiteScore

6.4

Impact factor

3.5

ISSN

00036951 (Print)

10773118 (Electronic)