Applied Physics Letters

, том 109 , издание 10 , страницы 102105

Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

Fabi Zhang ^{1, 2}

Makoto ARITA ³

Xu Wang ²

Zhengwei Chen ²

Katsuhiko Saito ²

Tooru Tanaka ²

Mitsuhiro Nishio ²

Teruaki Motooka ³

Qixin Guo ²

Скрыть аффилиации авторов Показать аффилиации авторов: 3 аффилиации

Guilin University of Electronic Technology 1 Guangxi Key Laboratory of Precision Navigation Technology and Application, , Guilin 541004, China |

Saga University 2 Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, , Saga 840-8502, Japan |

Kyushu University 3 Department of Materials Science and Engineering, Faculty of Engineering, , 744 Motooka, Fukuoka 819-0395, Japan |

Тип публикации: Journal Article

Дата публикации: 2016-09-05

AIP Publishing

Applied Physics Letters

scimago Q1

wos Q2

БС1

SJR: 0.896

CiteScore: 6.1

Impact factor: 3.6

ISSN: 00036951, 10773118

DOI: 10.1063/1.4962463

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Physics and Astronomy (miscellaneous)

Краткое описание

Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm−3 while the conductivity from 10−4 to 1 S cm−1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.

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Алмаев Алексей

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к.ф.-м.н., доц.

75 публикаций, 629 цитирований, 6 рецензий

Индекс Хирша: 15

Томский Государственный Университет

Области научных интересов

Ga2O3

Металлооксидные полупроводники

Широкозонные полупроводники

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Zhang F. et al. Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition // Applied Physics Letters. 2016. Vol. 109. No. 10. p. 102105.

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Zhang F., ARITA M., Wang X., Chen Z., Saito K., Tanaka T., Nishio M., Motooka T., Guo Q. Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition // Applied Physics Letters. 2016. Vol. 109. No. 10. p. 102105.

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TY - JOUR

DO - 10.1063/1.4962463

UR - https://doi.org/10.1063/1.4962463

TI - Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

T2 - Applied Physics Letters

AU - Zhang, Fabi

AU - ARITA, Makoto

AU - Wang, Xu

AU - Chen, Zhengwei

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Nishio, Mitsuhiro

AU - Motooka, Teruaki

AU - Guo, Qixin

PY - 2016

DA - 2016/09/05

PB - AIP Publishing

SP - 102105

IS - 10

VL - 109

SN - 0003-6951

SN - 1077-3118

ER -

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@article{2016_Zhang,

author = {Fabi Zhang and Makoto ARITA and Xu Wang and Zhengwei Chen and Katsuhiko Saito and Tooru Tanaka and Mitsuhiro Nishio and Teruaki Motooka and Qixin Guo},

title = {Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition},

journal = {Applied Physics Letters},

year = {2016},

volume = {109},

publisher = {AIP Publishing},

month = {sep},

url = {https://doi.org/10.1063/1.4962463},

number = {10},

pages = {102105},

doi = {10.1063/1.4962463}

}

MLA

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Zhang, Fabi, et al. “Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition.” Applied Physics Letters, vol. 109, no. 10, Sep. 2016, p. 102105. https://doi.org/10.1063/1.4962463.

Издатель

AIP Publishing

Журнал

Applied Physics Letters

scimago Q1

wos Q2

БС1

SJR

0.896

CiteScore

6.1

Impact factor

3.6

ISSN

00036951 (Print)

10773118 (Electronic)