Applied Physics Letters

, volume 111 , issue 2 , pages 22104

Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

Olivier Francois ^{1, 2}

Anis Daami ^{1, 2}

Christophe Licitra ^{1, 2}

Francois Templier ^{1, 2}

Hide authors affiliations Show authors affiliations: 2 affiliations

University Grenoble Alpes, CEA, LETI, MINATEC Campus , 38054 Grenoble, France and , 38000 Grenoble, France |

III-V Lab , 38054 Grenoble, France and , 38000 Grenoble, France |

Publication type: Journal Article

Publication date: 2017-07-10

AIP Publishing

Applied Physics Letters

scimago Q1

wos Q2

SJR: 0.896

CiteScore: 6.1

Impact factor: 3.6

ISSN: 00036951, 10773118

DOI: 10.1063/1.4993741

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Physics and Astronomy (miscellaneous)

Abstract

GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display applications. In these arrays, each μLED works as a single pixel of a whole image. The electro-optical performance of these μLEDs is an important subject to study. Here, we investigate the influence of LED size on the radiative and non-radiative recombination. The standard ABC model has been widely used to describe the efficiency of GaN based LEDs. Using this model, we extract A, B, and C coefficients for various LED sizes, showing how the competition between radiative and non-radiative recombination processes varies with the LED geometry. Time-resolved photoluminescence allows us to determine coefficient B, related to radiative recombination. Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. On the other hand, coefficient C is independent of LED size. This latter result demonstrates that efficiency droop does not depend on LED size.

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Francois O. et al. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study // Applied Physics Letters. 2017. Vol. 111. No. 2. p. 22104.

GOST all authors (up to 50) Copy

Francois O., Daami A., Licitra C., Templier F. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study // Applied Physics Letters. 2017. Vol. 111. No. 2. p. 22104.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.4993741

UR - https://doi.org/10.1063/1.4993741

TI - Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

T2 - Applied Physics Letters

AU - Francois, Olivier

AU - Daami, Anis

AU - Licitra, Christophe

AU - Templier, Francois

PY - 2017

DA - 2017/07/10

PB - AIP Publishing

SP - 22104

IS - 2

VL - 111

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2017_Francois,

author = {Olivier Francois and Anis Daami and Christophe Licitra and Francois Templier},

title = {Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study},

journal = {Applied Physics Letters},

year = {2017},

volume = {111},

publisher = {AIP Publishing},

month = {jul},

url = {https://doi.org/10.1063/1.4993741},

number = {2},

pages = {22104},

doi = {10.1063/1.4993741}

}

MLA

Cite this

MLA Copy

Francois, Olivier, et al. “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study.” Applied Physics Letters, vol. 111, no. 2, Jul. 2017, p. 22104. https://doi.org/10.1063/1.4993741.

Publisher

AIP Publishing

Journal

Applied Physics Letters

scimago Q1

wos Q2

SJR

0.896

CiteScore

6.1

Impact factor

3.6

ISSN

00036951 (Print)

10773118 (Electronic)