Open Access
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Yuewei Zhang
1
,
Fikadu Alema
2
,
Akhil Mauze
1
,
Onur S Koksaldi
3
,
Ross Miller
2
,
Andrei Osinsky
2
,
James S. Speck
1
2
Agnitron Technology Incorporated 2 , Eden Prairie, Minnesota 55346, USA
|
Publication type: Journal Article
Publication date: 2018-12-12
scimago Q1
wos Q2
SJR: 1.124
CiteScore: 7.9
Impact factor: 4.5
ISSN: 2166532X
General Materials Science
General Engineering
Abstract
In this work, we report record electron mobility values in unintentionally doped β-Ga2O3 films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped regrown n+ β-Ga2O3 contact layers, we were able to maintain Ohmic contact to the β-Ga2O3 films down to 40 K, allowing for reliable temperature-dependent Hall measurement. An electron mobility of 176 cm2/V s and 3481 cm2/V s were measured at room temperature and 54 K, respectively. The room and low temperature mobilities are both among the highest reported values in a bulk β-Ga2O3 film. A low net background charge concentration of 7.4 × 1015 cm−3 was confirmed by both temperature dependent Hall measurement and capacitance-voltage measurement. The feasibility of achieving low background impurity concentration and high electron mobility paves the road for the demonstration of high performance power electronics with high breakdown voltages and low on-resistances.
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Total citations:
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Zhang Y. et al. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature // APL Materials. 2018. Vol. 7. No. 2. p. 22506.
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Zhang Y., Alema F., Mauze A., Koksaldi O. S., Miller R., Osinsky A., Speck J. S. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature // APL Materials. 2018. Vol. 7. No. 2. p. 22506.
Cite this
RIS
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TY - JOUR
DO - 10.1063/1.5058059
UR - https://doi.org/10.1063/1.5058059
TI - MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
T2 - APL Materials
AU - Zhang, Yuewei
AU - Alema, Fikadu
AU - Mauze, Akhil
AU - Koksaldi, Onur S
AU - Miller, Ross
AU - Osinsky, Andrei
AU - Speck, James S.
PY - 2018
DA - 2018/12/12
PB - AIP Publishing
SP - 22506
IS - 2
VL - 7
SN - 2166-532X
ER -
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BibTex (up to 50 authors)
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@article{2018_Zhang,
author = {Yuewei Zhang and Fikadu Alema and Akhil Mauze and Onur S Koksaldi and Ross Miller and Andrei Osinsky and James S. Speck},
title = {MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature},
journal = {APL Materials},
year = {2018},
volume = {7},
publisher = {AIP Publishing},
month = {dec},
url = {https://doi.org/10.1063/1.5058059},
number = {2},
pages = {22506},
doi = {10.1063/1.5058059}
}
Cite this
MLA
Copy
Zhang, Yuewei, et al. “MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature.” APL Materials, vol. 7, no. 2, Dec. 2018, p. 22506. https://doi.org/10.1063/1.5058059.