Applied Physics Letters, volume 71, issue 16, pages 2376-2378

A superconductive magnetoresistive memory element using controlled exchange interaction

Publication typeJournal Article
Publication date1997-10-20
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor4
ISSN00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract

A memory device that can be switched between the normal state and superconducting state by an external magnetic field is proposed. The device consists of a superconducting/double magnetic (SM1M2) trilayer and is switched in a manner analogous to giant magnetoresistive memory devices. Using Usadel equations it is shown that the superconducting transition temperature of the device changes when the magnetic configurations of magnetizations of the two lower layers are switched between parallel and antiparallel. Appropriate design parameters are discussed and the materials issues analyzed.

Top-30

Citations by journals

5
10
15
20
25
30
35
40
45
Physical Review B
42 publications, 21.54%
JETP Letters
15 publications, 7.69%
Applied Physics Letters
13 publications, 6.67%
Superconductor Science and Technology
9 publications, 4.62%
Bulletin of the Russian Academy of Sciences: Physics
9 publications, 4.62%
Physical Review Letters
7 publications, 3.59%
Journal of Applied Physics
6 publications, 3.08%
Journal of Physics: Conference Series
6 publications, 3.08%
Physica C: Superconductivity and its Applications
5 publications, 2.56%
Journal of Magnetism and Magnetic Materials
5 publications, 2.56%
Beilstein Journal of Nanotechnology
4 publications, 2.05%
NanoScience and Technology
4 publications, 2.05%
Journal of Experimental and Theoretical Physics
4 publications, 2.05%
Известия Российской академии наук Серия физическая
4 publications, 2.05%
Low Temperature Physics
3 publications, 1.54%
Physical Review Applied
3 publications, 1.54%
Uspekhi Fizicheskih Nauk
3 publications, 1.54%
Journal of Low Temperature Physics
3 publications, 1.54%
Ferroelectrics
3 publications, 1.54%
Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizika)
2 publications, 1.03%
IEEE Transactions on Applied Superconductivity
2 publications, 1.03%
APL Materials
2 publications, 1.03%
New Journal of Physics
2 publications, 1.03%
Journal of Physics Condensed Matter
2 publications, 1.03%
Physics Procedia
2 publications, 1.03%
Physics of the Solid State
2 publications, 1.03%
Physics of Metals and Metallography
2 publications, 1.03%
Springer Tracts in Modern Physics
2 publications, 1.03%
Письма в Журнал экспериментальной и теоретической физики
2 publications, 1.03%
5
10
15
20
25
30
35
40
45

Citations by publishers

10
20
30
40
50
60
American Physical Society (APS)
53 publications, 27.18%
Pleiades Publishing
40 publications, 20.51%
American Institute of Physics (AIP)
25 publications, 12.82%
IOP Publishing
20 publications, 10.26%
Springer Nature
17 publications, 8.72%
Elsevier
15 publications, 7.69%
Beilstein-Institut
4 publications, 2.05%
Taylor & Francis
4 publications, 2.05%
IEEE
3 publications, 1.54%
Uspekhi Fizicheskikh Nauk Journal
3 publications, 1.54%
Wiley
2 publications, 1.03%
Multidisciplinary Digital Publishing Institute (MDPI)
2 publications, 1.03%
Akademizdatcenter Nauka
2 publications, 1.03%
EDP Sciences
1 publication, 0.51%
The Royal Society
1 publication, 0.51%
Treatise
1 publication, 0.51%
10
20
30
40
50
60
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
Share
Cite this
GOST |
Cite this
GOST Copy
OH S., Youm D., Beasley M. A superconductive magnetoresistive memory element using controlled exchange interaction // Applied Physics Letters. 1997. Vol. 71. No. 16. pp. 2376-2378.
GOST all authors (up to 50) Copy
OH S., Youm D., Beasley M. A superconductive magnetoresistive memory element using controlled exchange interaction // Applied Physics Letters. 1997. Vol. 71. No. 16. pp. 2376-2378.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1063/1.120032
UR - https://doi.org/10.1063/1.120032
TI - A superconductive magnetoresistive memory element using controlled exchange interaction
T2 - Applied Physics Letters
AU - OH, SANGJUN
AU - Youm, D.
AU - Beasley, M.R.
PY - 1997
DA - 1997/10/20
PB - American Institute of Physics (AIP)
SP - 2376-2378
IS - 16
VL - 71
SN - 0003-6951
SN - 1077-3118
ER -
BibTex |
Cite this
BibTex Copy
@article{1997_OH,
author = {SANGJUN OH and D. Youm and M.R. Beasley},
title = {A superconductive magnetoresistive memory element using controlled exchange interaction},
journal = {Applied Physics Letters},
year = {1997},
volume = {71},
publisher = {American Institute of Physics (AIP)},
month = {oct},
url = {https://doi.org/10.1063/1.120032},
number = {16},
pages = {2376--2378},
doi = {10.1063/1.120032}
}
MLA
Cite this
MLA Copy
OH, SANGJUN, et al. “A superconductive magnetoresistive memory element using controlled exchange interaction.” Applied Physics Letters, vol. 71, no. 16, Oct. 1997, pp. 2376-2378. https://doi.org/10.1063/1.120032.
Found error?