Epitaxial strain induced metal insulator transition in La0.9 Sr0.1 MnO3 and La0.88 Sr0.1 MnO3 thin films
F.S. Razavi
1
,
G. Gross
1
,
H. ‐U. Habermeier
1
,
O. Lebedev
2
,
S. Amelinckx
2
,
G. Van Tendeloo
2
,
A Vigliante
3
3
Max-Planck Institut für Metallforschung, D70506 Stuttgart, Germany
|
Publication type: Journal Article
Publication date: 2000-01-10
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
DOI:
10.1063/1.125687
Physics and Astronomy (miscellaneous)
Abstract
We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (<50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (>50 nm), similar to the single crystal, no such transition is observed below TC. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (<75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure.
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Razavi F. et al. Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films // Applied Physics Letters. 2000. Vol. 76. No. 2. pp. 155-157.
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Razavi F., Gross G., Habermeier H. ‐., Lebedev O., Amelinckx S., Van Tendeloo G., Vigliante A. Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films // Applied Physics Letters. 2000. Vol. 76. No. 2. pp. 155-157.
Cite this
RIS
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TY - JOUR
DO - 10.1063/1.125687
UR - https://doi.org/10.1063/1.125687
TI - Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films
T2 - Applied Physics Letters
AU - Razavi, F.S.
AU - Gross, G.
AU - Habermeier, H. ‐U.
AU - Lebedev, O.
AU - Amelinckx, S.
AU - Van Tendeloo, G.
AU - Vigliante, A
PY - 2000
DA - 2000/01/10
PB - AIP Publishing
SP - 155-157
IS - 2
VL - 76
SN - 0003-6951
SN - 1077-3118
ER -
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@article{2000_Razavi,
author = {F.S. Razavi and G. Gross and H. ‐U. Habermeier and O. Lebedev and S. Amelinckx and G. Van Tendeloo and A Vigliante},
title = {Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films},
journal = {Applied Physics Letters},
year = {2000},
volume = {76},
publisher = {AIP Publishing},
month = {jan},
url = {https://doi.org/10.1063/1.125687},
number = {2},
pages = {155--157},
doi = {10.1063/1.125687}
}
Cite this
MLA
Copy
Razavi, F.S., et al. “Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films.” Applied Physics Letters, vol. 76, no. 2, Jan. 2000, pp. 155-157. https://doi.org/10.1063/1.125687.