High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments
Тип публикации: Journal Article
Дата публикации: 2006-09-11
scimago Q1
wos Q2
БС1
SJR: 0.976
CiteScore: 6.4
Impact factor: 3.6
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Краткое описание
The authors demonstrated that N,N′-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) thin-film transistors (TFTs) exhibited high field-effect electron mobility of 2.1cm2∕Vs by just annealing at an adequate temperature (140°C) after the TFT fabrications. While PTCDI-C13 formed c-axis oriented thin films, the thermal treatments improved crystallinity of the thin films as revealed by x-ray diffraction. The thermal treatment also affected thin-film morphologies; the morphologies changed from oval ball-like grains to flat and large tilelike grains, which had molecular height steps and whose size reached several micrometers.
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ГОСТ
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Tatemichi S. et al. High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments // Applied Physics Letters. 2006. Vol. 89. No. 11. p. 112108.
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Tatemichi S., Ichikawa M., Koyama T., Taniguchi Y. High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments // Applied Physics Letters. 2006. Vol. 89. No. 11. p. 112108.
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TY - JOUR
DO - 10.1063/1.2349290
UR - https://doi.org/10.1063/1.2349290
TI - High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments
T2 - Applied Physics Letters
AU - Tatemichi, Shuhei
AU - Ichikawa, Musubu
AU - Koyama, Toshiki
AU - Taniguchi, Yoshio
PY - 2006
DA - 2006/09/11
PB - AIP Publishing
SP - 112108
IS - 11
VL - 89
SN - 0003-6951
SN - 1077-3118
ER -
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BibTex (до 50 авторов)
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@article{2006_Tatemichi,
author = {Shuhei Tatemichi and Musubu Ichikawa and Toshiki Koyama and Yoshio Taniguchi},
title = {High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments},
journal = {Applied Physics Letters},
year = {2006},
volume = {89},
publisher = {AIP Publishing},
month = {sep},
url = {https://doi.org/10.1063/1.2349290},
number = {11},
pages = {112108},
doi = {10.1063/1.2349290}
}
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MLA
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Tatemichi, Shuhei, et al. “High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments.” Applied Physics Letters, vol. 89, no. 11, Sep. 2006, p. 112108. https://doi.org/10.1063/1.2349290.