Journal of Applied Physics, volume 67, issue 6, pages 2894-2898

Explosive silicidation in nickel/amorphous‐silicon multilayer thin films

L. A. Clevenger ¹

C V Thompson ¹

K. N. Tu ²

Hide authors affiliations Show authors affiliations: 2 affiliations

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 |

IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 |

Publication type: Journal Article

Publication date: 1990-03-15

AIP Publishing

Journal: Journal of Applied Physics

Quartile SCImago

Quartile WOS

Impact factor: 3.2

ISSN: 00218979, 10897550

DOI: 10.1063/1.345429

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General Physics and Astronomy

Abstract

Self-propagating explosive reactions can occur in multilayer thin films. Explosive silicidation in nickel/amorphous-silicon multilayer thin films has been investigated using a combination of high-speed photography, high-speed temperature measurements, plan-view transmission electron microscopy, and thin film x-ray diffraction. The multilayer films had an atomic concentration ratio of 2 Ni atoms to 1 Si atom. The silicide phase formed by explosive silicidation was Ni2 Si. This was the same phase formed by conventional thermal annealing of the multilayer thin film. The temperature of the explosive reaction front was measured to be approximately 1565 K. The reaction-front velocity was found to vary from 22 to 27 m/s and to be at most weakly dependent on the modulation period and the total film thickness. The resulting Ni2 Si grain structure formed by explosive silicidation is less defective than Ni2 Si formed by conventional thermal annealing. This was attributed to the higher reaction temperatures and the shorter reaction times of explosively formed Ni2 Si as compared to Ni2 Si formed via conventional annealing.

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Clevenger L. A., Thompson C. V., Tu K. N. Explosive silicidation in nickel/amorphous‐silicon multilayer thin films // Journal of Applied Physics. 1990. Vol. 67. No. 6. pp. 2894-2898.

GOST all authors (up to 50) Copy

Clevenger L. A., Thompson C. V., Tu K. N. Explosive silicidation in nickel/amorphous‐silicon multilayer thin films // Journal of Applied Physics. 1990. Vol. 67. No. 6. pp. 2894-2898.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.345429

UR - https://doi.org/10.1063/1.345429

TI - Explosive silicidation in nickel/amorphous‐silicon multilayer thin films

T2 - Journal of Applied Physics

AU - Clevenger, L. A.

AU - Thompson, C V

AU - Tu, K. N.

PY - 1990

DA - 1990/03/15

PB - AIP Publishing

SP - 2894-2898

IS - 6

VL - 67

SN - 0021-8979

SN - 1089-7550

ER -

BibTex |

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BibTex Copy

@article{1990_Clevenger,

author = {L. A. Clevenger and C V Thompson and K. N. Tu},

title = {Explosive silicidation in nickel/amorphous‐silicon multilayer thin films},

journal = {Journal of Applied Physics},

year = {1990},

volume = {67},

publisher = {AIP Publishing},

month = {mar},

url = {https://doi.org/10.1063/1.345429},

number = {6},

pages = {2894--2898},

doi = {10.1063/1.345429}

}

MLA

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MLA Copy

Clevenger, L. A., et al. “Explosive silicidation in nickel/amorphous‐silicon multilayer thin films.” Journal of Applied Physics, vol. 67, no. 6, Mar. 1990, pp. 2894-2898. https://doi.org/10.1063/1.345429.

Found error?

Publisher

AIP Publishing

Journal

Journal of Applied Physics

Quartile SCImago

Quartile WOS

Impact factor

3.2

ISSN

00218979 ()
10897550 ()