AIP Conference Proceedings
Two-level quenching of photoluminescence in hexagonal boron nitride micropowder
Publication type: Proceedings Article
Publication date: 2016-04-01
Journal:
AIP Conference Proceedings
Quartile SCImago
— Quartile WOS
—
Impact factor: —
ISSN: 0094243X, 15517616
Abstract
The processes of photoluminescence thermal quenching in the range RT – 800 K of h-BN micropowder in the 3.56 eV band were studied. It was found that two non-radiative channels of excitations relaxation with activation energies of 0.27 and 0.81 eV control the quenching for emission observed. It was assumed that emptying the shallow traps based on ON-centers characterized external quenching in RT – 530 K range and non-radiative mechanism of donor-acceptor recombination began to dominate at T > 530 K.
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- We do not take into account publications without a DOI.
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Henaish A. M. A. et al. Two-level quenching of photoluminescence in hexagonal boron nitride micropowder // AIP Conference Proceedings. 2016.
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Henaish A. M. A., Vokhmintsev A. S., Weinstein I. Two-level quenching of photoluminescence in hexagonal boron nitride micropowder // AIP Conference Proceedings. 2016.
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TY - CPAPER
DO - 10.1063/1.4943473
UR - https://doi.org/10.1063/1.4943473
TI - Two-level quenching of photoluminescence in hexagonal boron nitride micropowder
T2 - AIP Conference Proceedings
AU - Henaish, A M A
AU - Vokhmintsev, Alexander S
AU - Weinstein, I.A.
PY - 2016
DA - 2016/04/01 00:00:00
PB - American Institute of Physics (AIP)
SN - 0094-243X
SN - 1551-7616
ER -
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@inproceedings{2016_Henaish,
author = {A M A Henaish and Alexander S Vokhmintsev and I.A. Weinstein},
title = {Two-level quenching of photoluminescence in hexagonal boron nitride micropowder},
year = {2016},
month = {apr},
publisher = {American Institute of Physics (AIP)}
}