Journal of Applied Physics, volume 124, issue 4, pages 44302
Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots
Publication type: Journal Article
Publication date: 2018-07-24
Journal:
Journal of Applied Physics
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 3.2
ISSN: 00218979, 10897550
General Physics and Astronomy
Abstract
Here, we report on the strong temperature dependence of PL properties in CdSe/ZnS core/shell quantum dots, within a broad temperature range of 80–500 K. Our results demonstrate different PL quenching mechanisms in high and low temperature ranges. In the low temperature range of below 320 K, PL quenching is proved to be dominated by thermally activated carrier escape. While in the high temperature range of above 320 K, PL undergoes additional quenching because of surface trapping by the thermally created surface defects, which is calculated and proved by the rapidly decreasing PL lifetime. Our calculating result proves that the model of thermally activated carrier escape is also responsible for PL quenching in the high temperature range. However, the red-shifted PL peak energy and the broadened FWHM with increasing temperature follow the same mechanisms in the whole temperature range. The former is due to the temperature-dependent band-gap shrinkage and the latter is due to the exciton scattering with acoustic and longitudinal-optical phonons.Here, we report on the strong temperature dependence of PL properties in CdSe/ZnS core/shell quantum dots, within a broad temperature range of 80–500 K. Our results demonstrate different PL quenching mechanisms in high and low temperature ranges. In the low temperature range of below 320 K, PL quenching is proved to be dominated by thermally activated carrier escape. While in the high temperature range of above 320 K, PL undergoes additional quenching because of surface trapping by the thermally created surface defects, which is calculated and proved by the rapidly decreasing PL lifetime. Our calculating result proves that the model of thermally activated carrier escape is also responsible for PL quenching in the high temperature range. However, the red-shifted PL peak energy and the broadened FWHM with increasing temperature follow the same mechanisms in the whole temperature range. The former is due to the temperature-dependent band-gap shrinkage and the latter is due to the exciton scattering with acou...
Top-30
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1 publication, 7.14%
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Citations by publishers
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4 publications, 28.57%
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3 publications, 21.43%
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American Institute of Physics (AIP)
2 publications, 14.29%
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Wiley
1 publication, 7.14%
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IOP Publishing
1 publication, 7.14%
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Elsevier
1 publication, 7.14%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 7.14%
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- We do not take into account publications without a DOI.
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Li B. et al. Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots // Journal of Applied Physics. 2018. Vol. 124. No. 4. p. 44302.
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Li B., Liu W., Yan L., Zhu X., YANG Y., Yang Q. Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots // Journal of Applied Physics. 2018. Vol. 124. No. 4. p. 44302.
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TY - JOUR
DO - 10.1063/1.5031056
UR - https://doi.org/10.1063/1.5031056
TI - Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots
T2 - Journal of Applied Physics
AU - Li, Bo
AU - Liu, Weilong
AU - Yan, Lin
AU - Zhu, Xiaojun
AU - YANG, YANQIANG
AU - Yang, Qingxin
PY - 2018
DA - 2018/07/24 00:00:00
PB - American Institute of Physics (AIP)
SP - 44302
IS - 4
VL - 124
SN - 0021-8979
SN - 1089-7550
ER -
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@article{2018_Li,
author = {Bo Li and Weilong Liu and Lin Yan and Xiaojun Zhu and YANQIANG YANG and Qingxin Yang},
title = {Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots},
journal = {Journal of Applied Physics},
year = {2018},
volume = {124},
publisher = {American Institute of Physics (AIP)},
month = {jul},
url = {https://doi.org/10.1063/1.5031056},
number = {4},
pages = {44302},
doi = {10.1063/1.5031056}
}
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Li, Bo, et al. “Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots.” Journal of Applied Physics, vol. 124, no. 4, Jul. 2018, p. 44302. https://doi.org/10.1063/1.5031056.