Applied Physics Letters

, volume 42 , issue 3 , pages 282-284

Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

B. C. Larson ¹

C W White ¹

T. S. Noggle ¹

J. F. Barhorst ¹

D.M. Mills ²

Hide authors affiliations Show authors affiliations: 2 affiliations

Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 |

Cornell High Energy Synchrotron Source and School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850 |

Publication type: Journal Article

Publication date: 1983-02-01

AIP Publishing

Applied Physics Letters

scimago Q1

wos Q2

SJR: 0.896

CiteScore: 6.1

Impact factor: 3.6

ISSN: 00036951, 10773118

DOI: 10.1063/1.93880

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Physics and Astronomy (miscellaneous)

Abstract

Nanosecond resolution time-resolved x-ray diffraction measurements have been used to study the temperature and temperature gradients in 〈100〉 and 〈111〉 oriented silicon crsytals during pulsed laser annealing. Thermal strain analysis of time-resolved extended Bragg scattering has shown the lattice temperature to reach the melting point during 15-ns, 1.5-J/cm2 ruby laser pulses and to remain at the melting point during the high reflectivity phase (HRP). The temperature gradients at the liquid-solid interface were found to be in the range of ∼107 K/cm during the HRP.

Found

1 citation

Aysin Rinat

🥼 🤝

DSc in Chemistry

112 publications, 1 115 citations, 1 review

h-index: 19

A.N.Nesmeyanov Institute of Organoelement Compounds of the Russian Academy of Sciences

Research interests

Raman spectroscopy

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Cite this

GOST |

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GOST Copy

Larson B. C. et al. Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing // Applied Physics Letters. 1983. Vol. 42. No. 3. pp. 282-284.

GOST all authors (up to 50) Copy

Larson B. C., White C. W., Noggle T. S., Barhorst J. F., Mills D. Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing // Applied Physics Letters. 1983. Vol. 42. No. 3. pp. 282-284.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1063/1.93880

UR - https://doi.org/10.1063/1.93880

TI - Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

T2 - Applied Physics Letters

AU - Larson, B. C.

AU - White, C W

AU - Noggle, T. S.

AU - Barhorst, J. F.

AU - Mills, D.M.

PY - 1983

DA - 1983/02/01

PB - AIP Publishing

SP - 282-284

IS - 3

VL - 42

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{1983_Larson,

author = {B. C. Larson and C W White and T. S. Noggle and J. F. Barhorst and D.M. Mills},

title = {Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing},

journal = {Applied Physics Letters},

year = {1983},

volume = {42},

publisher = {AIP Publishing},

month = {feb},

url = {https://doi.org/10.1063/1.93880},

number = {3},

pages = {282--284},

doi = {10.1063/1.93880}

}

MLA

Cite this

MLA Copy

Larson, B. C., et al. “Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing.” Applied Physics Letters, vol. 42, no. 3, Feb. 1983, pp. 282-284. https://doi.org/10.1063/1.93880.

Publisher

AIP Publishing

Journal

Applied Physics Letters

scimago Q1

wos Q2

SJR

0.896

CiteScore

6.1

Impact factor

3.6

ISSN

00036951 (Print)

10773118 (Electronic)