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volume 8 issue 5 pages 51111

Role of intermediate 4f states in tuning the band structure of high entropy oxides

Abhishek Sarkar 1, 2
B. Eggert 3
Xiaoke Mu 2
Johanna Lill 3
K. Ollefs 3
S. S. Bhattacharya 4
Heiko Wende 3
Robert Kruk 2
R. Brand 2, 3
Horst Hahn 1, 2
Publication typeJournal Article
Publication date2020-05-01
scimago Q1
wos Q2
SJR1.124
CiteScore7.9
Impact factor4.5
ISSN2166532X
General Materials Science
General Engineering
Abstract
High entropy oxides (HEOs) are single phase solid solutions consisting of 5 or more cations in approximately equiatomic proportions. In this study, we show reversible control of optical properties in a rare-earth (RE) based HEO-(Ce$_{0.2}$La$_{0.2}$Pr$_{0.2}$Sm$_{0.2}$Y$_{0.2}$)O$_{2-\delta}$ and subsequently utilize a combination of spectroscopic techniques to derive the features of the electronic band structure underpinning the observed optical phenomena. Heat treatment of the HEO under vacuum atmosphere followed by reheat-treatment in air results in a reversible change of the band gap energy, from 1.9 eV to 2.5 eV. The finding is consistent with the reversible changes in the oxidation state and related $f$-orbital occupancy of Pr. However, no pertinent changes in the phase composition or crystal structure is observed upon the vacuum heat treatment. Further annealing of this HEO under H$_2$ atmosphere, followed by reheat-treatment in air, results in even larger but still reversible change of the band gap energy from 1.9 eV to 3.2 eV. This is accompanied by a disorder-order type crystal structure transition and changes in the O 2$p$-RE 5$d$ hybridization evidenced from X-ray absorption near edge spectra (XANES). The O $K$ and RE ${M_{4,5}}$/$L_{3}$ XANES indicate that the presence of Ce and Pr (in 3+/4+) state leads to the formation of intermediate 4$f$ energy levels between the O 2$p$ and RE 5$d$ gap in HEO. It is concluded that heat treatment under reducing/oxidizing atmospheres affects these intermediate levels, thus, offering the possibility to tune the band gap energy in HEO.
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GOST Copy
Sarkar A. et al. Role of intermediate 4f states in tuning the band structure of high entropy oxides // APL Materials. 2020. Vol. 8. No. 5. p. 51111.
GOST all authors (up to 50) Copy
Sarkar A., Eggert B., Velasco L., Mu X., Lill J., Ollefs K., Bhattacharya S. S., Wende H., Kruk R., Brand R., Hahn H. Role of intermediate 4f states in tuning the band structure of high entropy oxides // APL Materials. 2020. Vol. 8. No. 5. p. 51111.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1063/5.0007944
UR - https://doi.org/10.1063/5.0007944
TI - Role of intermediate 4f states in tuning the band structure of high entropy oxides
T2 - APL Materials
AU - Sarkar, Abhishek
AU - Eggert, B.
AU - Velasco, Leonardo
AU - Mu, Xiaoke
AU - Lill, Johanna
AU - Ollefs, K.
AU - Bhattacharya, S. S.
AU - Wende, Heiko
AU - Kruk, Robert
AU - Brand, R.
AU - Hahn, Horst
PY - 2020
DA - 2020/05/01
PB - AIP Publishing
SP - 51111
IS - 5
VL - 8
SN - 2166-532X
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2020_Sarkar,
author = {Abhishek Sarkar and B. Eggert and Leonardo Velasco and Xiaoke Mu and Johanna Lill and K. Ollefs and S. S. Bhattacharya and Heiko Wende and Robert Kruk and R. Brand and Horst Hahn},
title = {Role of intermediate 4f states in tuning the band structure of high entropy oxides},
journal = {APL Materials},
year = {2020},
volume = {8},
publisher = {AIP Publishing},
month = {may},
url = {https://doi.org/10.1063/5.0007944},
number = {5},
pages = {51111},
doi = {10.1063/5.0007944}
}
MLA
Cite this
MLA Copy
Sarkar, Abhishek, et al. “Role of intermediate 4f states in tuning the band structure of high entropy oxides.” APL Materials, vol. 8, no. 5, May. 2020, p. 51111. https://doi.org/10.1063/5.0007944.