Atomic-scale simulation of ALD chemistry
Publication type: Journal Article
Publication date: 2012-06-22
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Published papers on atomic-scale simulation of the atomic layer deposition (ALD) process are reviewed. The main topic is reaction mechanism, considering the elementary steps of precursor adsorption, ligand elimination and film densification, as well as reactions with substrates (particularly Si and SiO2) and CVD-like decomposition at the surface. Density functional theory is the first principles method generally applied to these mechanistic questions. The most popular subject for modelling is the ALD of oxides and nitrides, particularly the high-k dielectrics HfO2, ZrO2?and Al2O3, due to their importance in semiconductor processing.
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Metrics
103
Total citations:
103
Citations from 2024:
15
(14.7%)
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MLA
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GOST
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Elliott S. D. Atomic-scale simulation of ALD chemistry // Semiconductor Science and Technology. 2012. Vol. 27. No. 7. p. 74008.
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Elliott S. D. Atomic-scale simulation of ALD chemistry // Semiconductor Science and Technology. 2012. Vol. 27. No. 7. p. 74008.
Cite this
RIS
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TY - JOUR
DO - 10.1088/0268-1242/27/7/074008
UR - https://doi.org/10.1088/0268-1242/27/7/074008
TI - Atomic-scale simulation of ALD chemistry
T2 - Semiconductor Science and Technology
AU - Elliott, Simon D.
PY - 2012
DA - 2012/06/22
PB - IOP Publishing
SP - 74008
IS - 7
VL - 27
SN - 0268-1242
SN - 1361-6641
ER -
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BibTex (up to 50 authors)
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@article{2012_Elliott,
author = {Simon D. Elliott},
title = {Atomic-scale simulation of ALD chemistry},
journal = {Semiconductor Science and Technology},
year = {2012},
volume = {27},
publisher = {IOP Publishing},
month = {jun},
url = {https://doi.org/10.1088/0268-1242/27/7/074008},
number = {7},
pages = {74008},
doi = {10.1088/0268-1242/27/7/074008}
}
Cite this
MLA
Copy
Elliott, Simon D.. “Atomic-scale simulation of ALD chemistry.” Semiconductor Science and Technology, vol. 27, no. 7, Jun. 2012, p. 74008. https://doi.org/10.1088/0268-1242/27/7/074008.