Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation
Rui Yang
1
,
Kazuya Terabe
2
,
Yiping Yao
2
,
Tohru Tsuruoka
2
,
Tsuyoshi HASEGAWA
2
,
James K Gimzewski
3
,
Masakazu Aono
2
Тип публикации: Journal Article
Дата публикации: 2013-09-02
scimago Q2
wos Q2
БС1
SJR: 0.597
CiteScore: 6.2
Impact factor: 2.8
ISSN: 09574484, 13616528
PubMed ID:
23999098
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Краткое описание
A compact neuromorphic nanodevice with inherent learning and memory properties emulating those of biological synapses is the key to developing artificial neural networks rivaling their biological counterparts. Experimental results showed that memorization with a wide time scale from volatile to permanent can be achieved in a WO3−x-based nanoionics device and can be precisely and cumulatively controlled by adjusting the device’s resistance state and input pulse parameters such as the amplitude, interval, and number. This control is analogous to biological synaptic plasticity including short-term plasticity, long-term potentiation, transition from short-term memory to long-term memory, forgetting processes for short- and long-term memory, learning speed, and learning history. A compact WO3−x-based nanoionics device with a simple stacked layer structure should thus be a promising candidate for use as an inorganic synapse in artificial neural networks due to its striking resemblance to the biological synapse.
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ГОСТ
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Yang R. et al. Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation // Nanotechnology. 2013. Vol. 24. No. 38. p. 384003.
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Yang R., Terabe K., Yao Y., Tsuruoka T., HASEGAWA T., Gimzewski J. K., Aono M. Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation // Nanotechnology. 2013. Vol. 24. No. 38. p. 384003.
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TY - JOUR
DO - 10.1088/0957-4484/24/38/384003
UR - https://doi.org/10.1088/0957-4484/24/38/384003
TI - Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation
T2 - Nanotechnology
AU - Yang, Rui
AU - Terabe, Kazuya
AU - Yao, Yiping
AU - Tsuruoka, Tohru
AU - HASEGAWA, Tsuyoshi
AU - Gimzewski, James K
AU - Aono, Masakazu
PY - 2013
DA - 2013/09/02
PB - IOP Publishing
SP - 384003
IS - 38
VL - 24
PMID - 23999098
SN - 0957-4484
SN - 1361-6528
ER -
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@article{2013_Yang,
author = {Rui Yang and Kazuya Terabe and Yiping Yao and Tohru Tsuruoka and Tsuyoshi HASEGAWA and James K Gimzewski and Masakazu Aono},
title = {Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation},
journal = {Nanotechnology},
year = {2013},
volume = {24},
publisher = {IOP Publishing},
month = {sep},
url = {https://doi.org/10.1088/0957-4484/24/38/384003},
number = {38},
pages = {384003},
doi = {10.1088/0957-4484/24/38/384003}
}
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MLA
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Yang, Rui, et al. “Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation.” Nanotechnology, vol. 24, no. 38, Sep. 2013, p. 384003. https://doi.org/10.1088/0957-4484/24/38/384003.