Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods
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IES - Institut d’Electronique et des Systèmes (860, rue Saint Priest, Bâtiment 5 - CC 05001 -34095 Montpellier Cedex 5 - France)
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Publication type: Journal Article
Publication date: 2024-11-21
scimago Q2
wos Q3
SJR: 0.496
CiteScore: 5.0
Impact factor: 2.1
ISSN: 09601317, 13616439
Abstract
Silicon machining plays a crucial role in shaping three-dimensional structures for Micro-Electro-Mechanical Systems (MEMS) applications. This study investigates Aspect Ratio Dependent Etching (ARDE) across various silicon etching processes, with a particular focus on Xenon Difluoride (XeF2) etching, in comparison to Reactive Ion Etching (RIE) and Deep Reactive Ion Etching (DRIE).By exploring different etching parameters, the study highlights the presence of ARDE in both plasma and non-plasma etching processes. Additionally, it is demonstrated that ARDE can be modeled by a saturating exponential function through experimental adjustment of parameters, enabling the prediction of etching profiles.
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Citations from 2024:
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Baradel B. et al. Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods // Journal of Micromechanics and Microengineering. 2024. Vol. 34. No. 12. p. 125002.
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Baradel B., Léon O., Méry F., Combette P., Giani A. Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods // Journal of Micromechanics and Microengineering. 2024. Vol. 34. No. 12. p. 125002.
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TY - JOUR
DO - 10.1088/1361-6439/ad8c52
UR - https://iopscience.iop.org/article/10.1088/1361-6439/ad8c52
TI - Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods
T2 - Journal of Micromechanics and Microengineering
AU - Baradel, Baptiste
AU - Léon, Olivier
AU - Méry, F.
AU - Combette, Philippe
AU - Giani, Alain
PY - 2024
DA - 2024/11/21
PB - IOP Publishing
SP - 125002
IS - 12
VL - 34
SN - 0960-1317
SN - 1361-6439
ER -
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BibTex (up to 50 authors)
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@article{2024_Baradel,
author = {Baptiste Baradel and Olivier Léon and F. Méry and Philippe Combette and Alain Giani},
title = {Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods},
journal = {Journal of Micromechanics and Microengineering},
year = {2024},
volume = {34},
publisher = {IOP Publishing},
month = {nov},
url = {https://iopscience.iop.org/article/10.1088/1361-6439/ad8c52},
number = {12},
pages = {125002},
doi = {10.1088/1361-6439/ad8c52}
}
Cite this
MLA
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Baradel, Baptiste, et al. “Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods.” Journal of Micromechanics and Microengineering, vol. 34, no. 12, Nov. 2024, p. 125002. https://iopscience.iop.org/article/10.1088/1361-6439/ad8c52.