Universal conductance fluctuations in a Bi1.5Sb0.5Te1.8Se1.2 topological insulator nano-scaled Hall bar structure
Erik Zimmermann
1, 2
,
Jonas Kölzer
1, 2
,
Michael Schleenvoigt
1, 2
,
Daniel Rosenbach
1, 2
,
G. Mussler
1, 2
,
Peter Schüffelgen
1, 2
,
T. Heider
1
,
L Plucinski
1
,
Jürgen Schubert
1, 2
,
Hans Lüth
1, 2
,
Detlev Grützmacher
1, 2
,
Thomas Schäpers
1, 2
Publication type: Journal Article
Publication date: 2023-02-01
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
We present low-temperature magnetotransport measurements characterizing the promising quaternary Bi1.5Sb0.5Te1.8Se1.2 topological insulator material. The measurements performed on a nano- Hall bar grown by selective-area molecular beam epitaxy revealed pronounced universal conductance fluctuations. It is shown that these fluctuations originate from phase-coherent loops within the topologically protected surface states. Furthermore, the decay of the fluctuation amplitude with increasing temperatures suggests a quasi one-dimensional transport regime.
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Zimmermann E. et al. Universal conductance fluctuations in a Bi1.5Sb0.5Te1.8Se1.2 topological insulator nano-scaled Hall bar structure // Semiconductor Science and Technology. 2023. Vol. 38. No. 3. p. 35010.
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Zimmermann E., Kölzer J., Schleenvoigt M., Rosenbach D., Mussler G., Schüffelgen P., Heider T., Plucinski L., Schubert J., Lüth H., Grützmacher D., Schäpers T. Universal conductance fluctuations in a Bi1.5Sb0.5Te1.8Se1.2 topological insulator nano-scaled Hall bar structure // Semiconductor Science and Technology. 2023. Vol. 38. No. 3. p. 35010.
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TY - JOUR
DO - 10.1088/1361-6641/acb45f
UR - https://doi.org/10.1088/1361-6641/acb45f
TI - Universal conductance fluctuations in a Bi1.5Sb0.5Te1.8Se1.2 topological insulator nano-scaled Hall bar structure
T2 - Semiconductor Science and Technology
AU - Zimmermann, Erik
AU - Kölzer, Jonas
AU - Schleenvoigt, Michael
AU - Rosenbach, Daniel
AU - Mussler, G.
AU - Schüffelgen, Peter
AU - Heider, T.
AU - Plucinski, L
AU - Schubert, Jürgen
AU - Lüth, Hans
AU - Grützmacher, Detlev
AU - Schäpers, Thomas
PY - 2023
DA - 2023/02/01
PB - IOP Publishing
SP - 35010
IS - 3
VL - 38
SN - 0268-1242
SN - 1361-6641
ER -
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BibTex (up to 50 authors)
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@article{2023_Zimmermann,
author = {Erik Zimmermann and Jonas Kölzer and Michael Schleenvoigt and Daniel Rosenbach and G. Mussler and Peter Schüffelgen and T. Heider and L Plucinski and Jürgen Schubert and Hans Lüth and Detlev Grützmacher and Thomas Schäpers},
title = {Universal conductance fluctuations in a Bi1.5Sb0.5Te1.8Se1.2 topological insulator nano-scaled Hall bar structure},
journal = {Semiconductor Science and Technology},
year = {2023},
volume = {38},
publisher = {IOP Publishing},
month = {feb},
url = {https://doi.org/10.1088/1361-6641/acb45f},
number = {3},
pages = {35010},
doi = {10.1088/1361-6641/acb45f}
}
Cite this
MLA
Copy
Zimmermann, Erik, et al. “Universal conductance fluctuations in a Bi1.5Sb0.5Te1.8Se1.2 topological insulator nano-scaled Hall bar structure.” Semiconductor Science and Technology, vol. 38, no. 3, Feb. 2023, p. 35010. https://doi.org/10.1088/1361-6641/acb45f.