Nanotechnology, volume 31, issue 16, pages 165201

Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory

Publication typeJournal Article
Publication date2020-01-28
Journal: Nanotechnology
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor3.5
ISSN09574484, 13616528
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Abstract
The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is a very attractive memory technology for near future computers because it has various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell, consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element, a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required to record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.

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Citations by publishers

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1 publication, 7.14%
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IEEE, 1, 7.14%
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1 publication, 7.14%
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GOST |
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GOST Copy
Rybkina A. A. et al. Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory // Nanotechnology. 2020. Vol. 31. No. 16. p. 165201.
GOST all authors (up to 50) Copy
Rybkina A. A., Rybkin A. G., Klimovskikh I. I., Skirdkov P., Zvezdin K. A., ZVEZDIN A. K., Shikin A. M. Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory // Nanotechnology. 2020. Vol. 31. No. 16. p. 165201.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1088/1361-6528/ab6470
UR - https://doi.org/10.1088%2F1361-6528%2Fab6470
TI - Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory
T2 - Nanotechnology
AU - Rybkina, A. A.
AU - Rybkin, Artem G.
AU - Klimovskikh, Ilya I.
AU - Skirdkov, P.N.
AU - Zvezdin, Konstantin A.
AU - ZVEZDIN, A. K.
AU - Shikin, Alexander M.
PY - 2020
DA - 2020/01/28 00:00:00
PB - IOP Publishing
SP - 165201
IS - 16
VL - 31
SN - 0957-4484
SN - 1361-6528
ER -
BibTex |
Cite this
BibTex Copy
@article{2020_Rybkina,
author = {A. A. Rybkina and Artem G. Rybkin and Ilya I. Klimovskikh and P.N. Skirdkov and Konstantin A. Zvezdin and A. K. ZVEZDIN and Alexander M. Shikin},
title = {Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory},
journal = {Nanotechnology},
year = {2020},
volume = {31},
publisher = {IOP Publishing},
month = {jan},
url = {https://doi.org/10.1088%2F1361-6528%2Fab6470},
number = {16},
pages = {165201},
doi = {10.1088/1361-6528/ab6470}
}
MLA
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MLA Copy
Rybkina, A. A., et al. “Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory.” Nanotechnology, vol. 31, no. 16, Jan. 2020, p. 165201. https://doi.org/10.1088%2F1361-6528%2Fab6470.
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