Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory
A. A. Rybkina
1
,
Artem G. Rybkin
1
,
P.N. Skirdkov
2, 3
,
Konstantin A. Zvezdin
2, 3
,
A. K. ZVEZDIN
2, 3
,
Publication type: Journal Article
Publication date: 2020-01-28
scimago Q2
wos Q2
SJR: 0.597
CiteScore: 6.2
Impact factor: 2.8
ISSN: 09574484, 13616528
PubMed ID:
31860886
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Abstract
The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is a very attractive memory technology for near future computers because it has various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell, consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element, a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required to record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.
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Total citations:
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Citations from 2024:
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GOST
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Rybkina A. A. et al. Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory // Nanotechnology. 2020. Vol. 31. No. 16. p. 165201.
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Rybkina A. A., Rybkin A. G., Klimovskikh I. I., Skirdkov P., Zvezdin K. A., ZVEZDIN A. K., Shikin A. M. Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory // Nanotechnology. 2020. Vol. 31. No. 16. p. 165201.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1088/1361-6528/ab6470
UR - https://iopscience.iop.org/article/10.1088/1361-6528/ab6470
TI - Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory
T2 - Nanotechnology
AU - Rybkina, A. A.
AU - Rybkin, Artem G.
AU - Klimovskikh, Ilya I.
AU - Skirdkov, P.N.
AU - Zvezdin, Konstantin A.
AU - ZVEZDIN, A. K.
AU - Shikin, Alexander M.
PY - 2020
DA - 2020/01/28
PB - IOP Publishing
SP - 165201
IS - 16
VL - 31
PMID - 31860886
SN - 0957-4484
SN - 1361-6528
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2020_Rybkina,
author = {A. A. Rybkina and Artem G. Rybkin and Ilya I. Klimovskikh and P.N. Skirdkov and Konstantin A. Zvezdin and A. K. ZVEZDIN and Alexander M. Shikin},
title = {Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory},
journal = {Nanotechnology},
year = {2020},
volume = {31},
publisher = {IOP Publishing},
month = {jan},
url = {https://iopscience.iop.org/article/10.1088/1361-6528/ab6470},
number = {16},
pages = {165201},
doi = {10.1088/1361-6528/ab6470}
}
Cite this
MLA
Copy
Rybkina, A. A., et al. “Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory.” Nanotechnology, vol. 31, no. 16, Jan. 2020, p. 165201. https://iopscience.iop.org/article/10.1088/1361-6528/ab6470.