volume 35 issue 46 pages 465001

Controlled electrodeposition of cobalt nanowires using iR compensation and their electron transport properties

Publication typeJournal Article
Publication date2024-08-27
scimago Q2
wos Q2
SJR0.597
CiteScore6.2
Impact factor2.8
ISSN09574484, 13616528
Abstract

Superconducting hybrid structures based on single nanowires are a new type of nanoscale devices with peculiar transport characteristics. Control over the nanowire structure is essential for understanding hybrid electronic phenomena arising in such complex systems. In this work, we report a technique for the fabrication of cobalt nanowires by template-assisted electrodeposition using iR compensation, which allows revealing the fundamental dependence of the preferred direction of nanowire growth on the deposition potential. Long coarse-grained cobalt nanowires with a diameter of 70 nm have been implemented into Nb/Co/Nb hybrid structures. We demonstrate that using electrode fabrication techniques that do not contaminate the surface of the nanowire leads to a high quality of devices with low-resistance interfaces. Low-temperature resistivity of 4.94 ± 0.83 µΩ cm and other transport characteristics of Co nanowires are reported. The absence of long-range superconducting proximity effect for Nb/Co/Nb systems with different nanowire length is discussed.

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Sotnichuk S. V. et al. Controlled electrodeposition of cobalt nanowires using iR compensation and their electron transport properties // Nanotechnology. 2024. Vol. 35. No. 46. p. 465001.
GOST all authors (up to 50) Copy
Sotnichuk S. V., Skryabina O., Shishkin A. G., Golovchanskiy I., Bakurskiy S., Stolyarov V. S., Napolskii K. S. Controlled electrodeposition of cobalt nanowires using iR compensation and their electron transport properties // Nanotechnology. 2024. Vol. 35. No. 46. p. 465001.
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RIS Copy
TY - JOUR
DO - 10.1088/1361-6528/ad6d72
UR - https://iopscience.iop.org/article/10.1088/1361-6528/ad6d72
TI - Controlled electrodeposition of cobalt nanowires using iR compensation and their electron transport properties
T2 - Nanotechnology
AU - Sotnichuk, Stepan V
AU - Skryabina, O.V.
AU - Shishkin, Andrey G.
AU - Golovchanskiy, I.A.
AU - Bakurskiy, S.V.
AU - Stolyarov, V. S.
AU - Napolskii, Kirill S.
PY - 2024
DA - 2024/08/27
PB - IOP Publishing
SP - 465001
IS - 46
VL - 35
PMID - 39121868
SN - 0957-4484
SN - 1361-6528
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2024_Sotnichuk,
author = {Stepan V Sotnichuk and O.V. Skryabina and Andrey G. Shishkin and I.A. Golovchanskiy and S.V. Bakurskiy and V. S. Stolyarov and Kirill S. Napolskii},
title = {Controlled electrodeposition of cobalt nanowires using iR compensation and their electron transport properties},
journal = {Nanotechnology},
year = {2024},
volume = {35},
publisher = {IOP Publishing},
month = {aug},
url = {https://iopscience.iop.org/article/10.1088/1361-6528/ad6d72},
number = {46},
pages = {465001},
doi = {10.1088/1361-6528/ad6d72}
}
MLA
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MLA Copy
Sotnichuk, Stepan V., et al. “Controlled electrodeposition of cobalt nanowires using iR compensation and their electron transport properties.” Nanotechnology, vol. 35, no. 46, Aug. 2024, p. 465001. https://iopscience.iop.org/article/10.1088/1361-6528/ad6d72.