The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles
Publication type: Journal Article
Publication date: 2018-06-11
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Photo-induced current through nanocomposite heterojunction structures consisting of a TiO2 coating activated with embedded gold nanoparticles on top of Si, SiO2, and columnar structured SiO2 is studied. The highest photo-activity in the visible part of the spectrum is found in the composite containing pillar-like silicon dioxide nanostructures. Experimental results were qualitatively explained on the basis of Franz-Keldysh effect taking into account the effects of electrical inhomogeneities appearing at charged nanoparticles. It is established that processes at the interface between silicon and noble metal nanoparticles play an important role in charge carrier photo-generation which opens a new opportunity to tune the photo-response of a nanocomposite via changing heterostructure topology.
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Total citations:
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Mishin M. V. et al. The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles // Semiconductor Science and Technology. 2018. Vol. 33. No. 7. p. 75014.
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Mishin M. V., Vorobyev A., Kondrateva A. S., Koroleva E., Karaseov P. A., Bespalova P. G., Shakhmin A. L., Glukhovskoy A. V., Wurz M. C., Filimonov A. The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles // Semiconductor Science and Technology. 2018. Vol. 33. No. 7. p. 75014.
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TY - JOUR
DO - 10.1088/1361-6641/aac4f3
UR - https://iopscience.iop.org/article/10.1088/1361-6641/aac4f3
TI - The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles
T2 - Semiconductor Science and Technology
AU - Mishin, Maxim V.
AU - Vorobyev, Alexandr
AU - Kondrateva, Anastasia S
AU - Koroleva, E.
AU - Karaseov, Platon A
AU - Bespalova, Polina G
AU - Shakhmin, Alexander L
AU - Glukhovskoy, Anatoly V
AU - Wurz, Marc Christopher
AU - Filimonov, Alexey
PY - 2018
DA - 2018/06/11
PB - IOP Publishing
SP - 75014
IS - 7
VL - 33
SN - 0268-1242
SN - 1361-6641
ER -
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BibTex (up to 50 authors)
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@article{2018_Mishin,
author = {Maxim V. Mishin and Alexandr Vorobyev and Anastasia S Kondrateva and E. Koroleva and Platon A Karaseov and Polina G Bespalova and Alexander L Shakhmin and Anatoly V Glukhovskoy and Marc Christopher Wurz and Alexey Filimonov},
title = {The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles},
journal = {Semiconductor Science and Technology},
year = {2018},
volume = {33},
publisher = {IOP Publishing},
month = {jun},
url = {https://iopscience.iop.org/article/10.1088/1361-6641/aac4f3},
number = {7},
pages = {75014},
doi = {10.1088/1361-6641/aac4f3}
}
Cite this
MLA
Copy
Mishin, Maxim V., et al. “The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles.” Semiconductor Science and Technology, vol. 33, no. 7, Jun. 2018, p. 75014. https://iopscience.iop.org/article/10.1088/1361-6641/aac4f3.