Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
Publication type: Journal Article
Publication date: 2019-02-20
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of 0.57 eV. Bp f = Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of ELS=40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/ SC structures without dielectric tunneling barriers.
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Total citations:
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Citations from 2024:
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(18%)
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Lukyanenko A. V. et al. Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure // Semiconductor Science and Technology. 2019. Vol. 34. No. 3. p. 35024.
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Volkov N. Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure // Semiconductor Science and Technology. 2019. Vol. 34. No. 3. p. 35024.
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RIS
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TY - JOUR
DO - 10.1088/1361-6641/ab0327
UR - https://doi.org/10.1088/1361-6641/ab0327
TI - Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
T2 - Semiconductor Science and Technology
AU - Volkov, N.V.
PY - 2019
DA - 2019/02/20
PB - IOP Publishing
SP - 35024
IS - 3
VL - 34
SN - 0268-1242
SN - 1361-6641
ER -
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BibTex (up to 50 authors)
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@article{2019_Lukyanenko,
author = {N.V. Volkov},
title = {Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure},
journal = {Semiconductor Science and Technology},
year = {2019},
volume = {34},
publisher = {IOP Publishing},
month = {feb},
url = {https://doi.org/10.1088/1361-6641/ab0327},
number = {3},
pages = {35024},
doi = {10.1088/1361-6641/ab0327}
}
Cite this
MLA
Copy
Lukyanenko, A. V., et al. “Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure.” Semiconductor Science and Technology, vol. 34, no. 3, Feb. 2019, p. 35024. https://doi.org/10.1088/1361-6641/ab0327.