Physical Review B

, volume 50 , issue 12 , pages 8479-8487

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)

V. Bressler‐Hill ^{1, 2}

A. Lorke ³

Axel Lorke ³

S. Varma ²

P. M. Petroff ^{1, 3}

K Pond ^{1, 3}

W.H. Weinberg ^{1, 2}

Hide authors affiliations Show authors affiliations: 3 affiliations

Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106 |

Chemical Engineering Department, University of California, Santa Barbara, California 93106 |

Materials Department, University of California, Santa Barbara, California 93106 |

Publication type: Journal Article

Publication date: 1994-09-15

American Physical Society (APS)

Physical Review B

scimago Q1

wos Q2

SJR: 1.303

CiteScore: 6.2

Impact factor: 3.7

ISSN: 24699950, 24699969, 10980121, 1550235X

DOI: 10.1103/physrevb.50.8479

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PubMed ID: 9974866

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Bressler‐Hill V. et al. Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4) // Physical Review B. 1994. Vol. 50. No. 12. pp. 8479-8487.

GOST all authors (up to 50) Copy

Bressler‐Hill V., Lorke A., Lorke A., Varma S., Petroff P. M., Pond K., Weinberg W. Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4) // Physical Review B. 1994. Vol. 50. No. 12. pp. 8479-8487.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1103/physrevb.50.8479

UR - https://doi.org/10.1103/physrevb.50.8479

TI - Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)

T2 - Physical Review B

AU - Bressler‐Hill, V.

AU - Lorke, A.

AU - Lorke, Axel

AU - Varma, S.

AU - Petroff, P. M.

AU - Pond, K

AU - Weinberg, W.H.

PY - 1994

DA - 1994/09/15

PB - American Physical Society (APS)

SP - 8479-8487

IS - 12

VL - 50

PMID - 9974866

SN - 2469-9950

SN - 2469-9969

SN - 1098-0121

SN - 1550-235X

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{1994_Bressler‐Hill,

author = {V. Bressler‐Hill and A. Lorke and Axel Lorke and S. Varma and P. M. Petroff and K Pond and W.H. Weinberg},

title = {Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)},

journal = {Physical Review B},

year = {1994},

volume = {50},

publisher = {American Physical Society (APS)},

month = {sep},

url = {https://doi.org/10.1103/physrevb.50.8479},

number = {12},

pages = {8479--8487},

doi = {10.1103/physrevb.50.8479}

}

MLA

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MLA Copy

Bressler‐Hill, V., et al. “Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4).” Physical Review B, vol. 50, no. 12, Sep. 1994, pp. 8479-8487. https://doi.org/10.1103/physrevb.50.8479.

Publisher

American Physical Society (APS)

Journal

Physical Review B

scimago Q1

wos Q2

SJR

1.303

CiteScore

6.2

Impact factor

3.7

ISSN

24699950 (Print)

24699969 (Electronic)

10980121 (Print)

1550235X (Electronic)