Physical Review B, volume 67, issue 11, publication number 113305

Strong enhancement of the valley splitting in a two-dimensional electron system in silicon

Khrapai V. S. ¹

Khrapai Vadim S. ¹

Shashkin A. A. ¹

Dolgopolov V T ¹

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Institute of Solid State Physics, Chernogolovka, Moscow district 142432, Russia |

Publication type: Journal Article

Publication date: 2003-03-17

American Physical Society (APS)

Journal: Physical Review B

Quartile SCImago

Quartile WOS

Impact factor: 3.7

ISSN: 24699950, 24699969, 10980121, 1550235X

DOI: 10.1103/physrevb.67.113305

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Abstract

Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at \nu=1 and \nu=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases LINEARLY with magnetic field. This result has not been explained by existing theories.

By date By citations

Citations by journals

	2 4 6 8 10 12 14
Physical Review B	Physical Review B, 13, 25% Physical Review B 13 publications, 25%
Physical Review Letters	Physical Review Letters, 8, 15.38% Physical Review Letters 8 publications, 15.38%
Physica E: Low-Dimensional Systems and Nanostructures	Physica E: Low-Dimensional Systems and Nanostructures, 4, 7.69% Physica E: Low-Dimensional Systems and Nanostructures 4 publications, 7.69%
Applied Physics Letters	Applied Physics Letters, 3, 5.77% Applied Physics Letters 3 publications, 5.77%
JETP Letters	JETP Letters, 3, 5.77% JETP Letters 3 publications, 5.77%
Uspekhi Fizicheskih Nauk	Uspekhi Fizicheskih Nauk, 2, 3.85% Uspekhi Fizicheskih Nauk 2 publications, 3.85%
New Journal of Physics	New Journal of Physics, 2, 3.85% New Journal of Physics 2 publications, 3.85%
Acta Physica Sinica	Acta Physica Sinica, 2, 3.85% Acta Physica Sinica 2 publications, 3.85%
Journal of Applied Physics	Journal of Applied Physics, 1, 1.92% Journal of Applied Physics 1 publication, 1.92%
Low Temperature Physics	Low Temperature Physics, 1, 1.92% Low Temperature Physics 1 publication, 1.92%
Reviews of Modern Physics	Reviews of Modern Physics, 1, 1.92% Reviews of Modern Physics 1 publication, 1.92%
International Journal of Modern Physics B	International Journal of Modern Physics B, 1, 1.92% International Journal of Modern Physics B 1 publication, 1.92%
International Journal of Nanoscience	International Journal of Nanoscience, 1, 1.92% International Journal of Nanoscience 1 publication, 1.92%
Nature Physics	Nature Physics, 1, 1.92% Nature Physics 1 publication, 1.92%
Annals of Physics	Annals of Physics, 1, 1.92% Annals of Physics 1 publication, 1.92%
Solid State Communications	Solid State Communications, 1, 1.92% Solid State Communications 1 publication, 1.92%
Physica Status Solidi (B): Basic Research	Physica Status Solidi (B): Basic Research, 1, 1.92% Physica Status Solidi (B): Basic Research 1 publication, 1.92%
Nano Letters	Nano Letters, 1, 1.92% Nano Letters 1 publication, 1.92%
Journal of Experimental and Theoretical Physics	Journal of Experimental and Theoretical Physics, 1, 1.92% Journal of Experimental and Theoretical Physics 1 publication, 1.92%
NanoScience and Technology	NanoScience and Technology, 1, 1.92% NanoScience and Technology 1 publication, 1.92%
Topics in Applied Physics	Topics in Applied Physics, 1, 1.92% Topics in Applied Physics 1 publication, 1.92%
Computational Microelectronics	Computational Microelectronics, 1, 1.92% Computational Microelectronics 1 publication, 1.92%
	2 4 6 8 10 12 14

Citations by publishers

	5 10 15 20 25
American Physical Society (APS)	American Physical Society (APS), 22, 42.31% American Physical Society (APS) 22 publications, 42.31%
Elsevier	Elsevier, 6, 11.54% Elsevier 6 publications, 11.54%
American Institute of Physics (AIP)	American Institute of Physics (AIP), 5, 9.62% American Institute of Physics (AIP) 5 publications, 9.62%
Springer Nature	Springer Nature, 4, 7.69% Springer Nature 4 publications, 7.69%
Pleiades Publishing	Pleiades Publishing, 4, 7.69% Pleiades Publishing 4 publications, 7.69%
Uspekhi Fizicheskikh Nauk Journal	Uspekhi Fizicheskikh Nauk Journal, 2, 3.85% Uspekhi Fizicheskikh Nauk Journal 2 publications, 3.85%
World Scientific	World Scientific, 2, 3.85% World Scientific 2 publications, 3.85%
IOP Publishing	IOP Publishing, 2, 3.85% IOP Publishing 2 publications, 3.85%
Chinese Physical Society	Chinese Physical Society, 2, 3.85% Chinese Physical Society 2 publications, 3.85%
Wiley	Wiley, 1, 1.92% Wiley 1 publication, 1.92%
American Chemical Society (ACS)	American Chemical Society (ACS), 1, 1.92% American Chemical Society (ACS) 1 publication, 1.92%
	5 10 15 20 25

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Khrapai V. S. et al. Strong enhancement of the valley splitting in a two-dimensional electron system in silicon // Physical Review B. 2003. Vol. 67. No. 11. 113305

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Khrapai V. S., Khrapai V. S., Shashkin A. A., Dolgopolov V. T. Strong enhancement of the valley splitting in a two-dimensional electron system in silicon // Physical Review B. 2003. Vol. 67. No. 11. 113305

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RIS Copy

TY - JOUR

DO - 10.1103/physrevb.67.113305

UR - https://doi.org/10.1103%2Fphysrevb.67.113305

TI - Strong enhancement of the valley splitting in a two-dimensional electron system in silicon

T2 - Physical Review B

AU - Khrapai, V. S.

AU - Shashkin, A. A.

AU - Dolgopolov, V T

AU - Khrapai, Vadim S.

PY - 2003

DA - 2003/03/17 00:00:00

PB - American Physical Society (APS)

IS - 11

VL - 67

SN - 2469-9950

SN - 2469-9969

SN - 1098-0121

SN - 1550-235X

ER -

BibTex

Cite this

BibTex Copy

@article{2003_Khrapai,

author = {V. S. Khrapai and A. A. Shashkin and V T Dolgopolov and Vadim S. Khrapai},

title = {Strong enhancement of the valley splitting in a two-dimensional electron system in silicon},

journal = {Physical Review B},

year = {2003},

volume = {67},

publisher = {American Physical Society (APS)},

month = {mar},

url = {https://doi.org/10.1103%2Fphysrevb.67.113305},

number = {11},

doi = {10.1103/physrevb.67.113305}

}

Found error?

Publisher

American Physical Society (APS)

Journal

Physical Review B

Quartile SCImago

Quartile WOS

Impact factor

3.7

ISSN

24699950 (Print)
24699969 (Electronic)
10980121 (Print)
1550235X (Electronic)

Labs

Laboratory of Electronic Kinetics

Profiles

Khrapai, Vadim S