American Physical Society (APS)
Physical Review Materials
,  volume 4 ,  issue 11 ,  publication number 114601

Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots

Publication type: Journal Article
Publication date: 2020-11-05
American Physical Society (APS)
scimago Q1
wos Q2
SJR: 0.945
CiteScore: 5.9
Impact factor: 3.4
ISSN: 24759953
General Materials Science
Physics and Astronomy (miscellaneous)
Abstract
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surface reconstructions. Multiple layers were grown under different conditions to study their effects on the formation, morphology and local composition of the SMLQDs. The morphological and compositional variations in SMLQDs were observed by both filled and emptystate imaging. A detailed analysis of indium segregation in the SMLQDs layers was described by fitting local indium concentration profile with a standard segregation model. A strong influence of arsenic flux over the formation of the SMLQDs and indium incorporation was observed and reported. We investigated the well-width fluctuations of the InGaAs quantum well (QW) in which SMLQDs were formed . The monolayer fluctuations of the well width were negligible compared to the more pronounced compositional fluctuations in all the layers. Keywords: Submonolayer quantum dots, Surface reconstruction, X-STM, Indium segregation
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Gajjela R. S. R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots // Physical Review Materials. 2020. Vol. 4. No. 11. 114601
GOST all authors (up to 50) Copy
Gajjela R. S. R., Hendriks A. L., Alzeidan A., Cantalice T. F., Quivy A., Koenraad P. M. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots // Physical Review Materials. 2020. Vol. 4. No. 11. 114601
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1103/physrevmaterials.4.114601
UR - https://doi.org/10.1103/physrevmaterials.4.114601
TI - Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
T2 - Physical Review Materials
AU - Gajjela, R. S. R.
AU - Hendriks, A. L.
AU - Alzeidan, A.
AU - Cantalice, T. F.
AU - Quivy, A.A
AU - Koenraad, Paul M.
PY - 2020
DA - 2020/11/05
PB - American Physical Society (APS)
IS - 11
VL - 4
SN - 2475-9953
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@article{2020_Gajjela,
author = {R. S. R. Gajjela and A. L. Hendriks and A. Alzeidan and T. F. Cantalice and A.A Quivy and Paul M. Koenraad},
title = {Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots},
journal = {Physical Review Materials},
year = {2020},
volume = {4},
publisher = {American Physical Society (APS)},
month = {nov},
url = {https://doi.org/10.1103/physrevmaterials.4.114601},
number = {11},
pages = {114601},
doi = {10.1103/physrevmaterials.4.114601}
}