Open Access
Large planar Hall effect in bismuth thin films
Publication type: Journal Article
Publication date: 2020-05-06
scimago Q1
wos Q1
SJR: 1.593
CiteScore: 6.8
Impact factor: 4.2
ISSN: 26431564
General Engineering
Abstract
The authors show that a large planar Hall effect can originate from highly anisotropic electronic structures and ultrahigh carrier mobilities by studying the planar Hall effect along different crystal directions. The differences and similarities of planar Hall effects induced by topologically trivial and nontrivial reasons are compared
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Metrics
25
Total citations:
25
Citations from 2024:
11
(44%)
Cite this
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RIS |
BibTex
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GOST
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Yang S. et al. Large planar Hall effect in bismuth thin films // Physical Review Research. 2020. Vol. 2. No. 2. 022029
GOST all authors (up to 50)
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Yang S., Chang K., PARKIN S. S. P., Parkin S. J. Large planar Hall effect in bismuth thin films // Physical Review Research. 2020. Vol. 2. No. 2. 022029
Cite this
RIS
Copy
TY - JOUR
DO - 10.1103/physrevresearch.2.022029
UR - https://doi.org/10.1103/physrevresearch.2.022029
TI - Large planar Hall effect in bismuth thin films
T2 - Physical Review Research
AU - Yang, Shuo-Ying
AU - Chang, Kai
AU - PARKIN, STUART S. P.
AU - Parkin, S. J.
PY - 2020
DA - 2020/05/06
PB - American Physical Society (APS)
IS - 2
VL - 2
SN - 2643-1564
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2020_Yang,
author = {Shuo-Ying Yang and Kai Chang and STUART S. P. PARKIN and S. J. Parkin},
title = {Large planar Hall effect in bismuth thin films},
journal = {Physical Review Research},
year = {2020},
volume = {2},
publisher = {American Physical Society (APS)},
month = {may},
url = {https://doi.org/10.1103/physrevresearch.2.022029},
number = {2},
pages = {022029},
doi = {10.1103/physrevresearch.2.022029}
}
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