Shallow and deep levels in carbon-doped hexagonal boron nitride crystals
T. Pelini
1
,
C. Elias
1
,
R. PAGE
2
,
Lianjie Xue
3
,
Shuai Liu
3
,
J. Li
3
,
James H. Edgar
3
,
A. Dréau
1
,
V. Jacques
1
,
Pierre Valvin
1
,
Bernard Gil
1
,
2
Publication type: Journal Article
Publication date: 2019-09-05
scimago Q1
wos Q2
SJR: 0.945
CiteScore: 5.9
Impact factor: 3.4
ISSN: 24759953
General Materials Science
Physics and Astronomy (miscellaneous)
Abstract
We study shallow and deep levels in carbon-doped hexagonal boron nitride crystals precipitated from a molten metal solution in a high-temperature furnace. Reflectance and photoluminescence under deep ultraviolet excitation are complemented by spatially resolved experiments by means of a scanning confocal micro-photoluminescence setup operating in the ultraviolet. Isotopically controlled carbon doping does not induce any energy shift of the well-known deep-level emission at 4.1 eV. Our detailed characterization in a series of carbon-doped crystals reveals that the incorporation of carbon during the growth process results in a distinct class of shallow and deep levels in hexagonal boron nitride, calling into question the exact role of carbon in the growth of hexagonal boron nitride and its direct or indirect influence on the formation of the crystal defects.
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51
Total citations:
51
Citations from 2024:
19
(37%)
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GOST
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Pelini T. et al. Shallow and deep levels in carbon-doped hexagonal boron nitride crystals // Physical Review Materials. 2019. Vol. 3. No. 9. 094001
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Pelini T., Elias C., PAGE R., Xue L., Liu S., Li J., Edgar J. H., Dréau A., Jacques V., Valvin P., Gil B., Cassabois G. Shallow and deep levels in carbon-doped hexagonal boron nitride crystals // Physical Review Materials. 2019. Vol. 3. No. 9. 094001
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RIS
Copy
TY - JOUR
DO - 10.1103/PhysRevMaterials.3.094001
UR - https://doi.org/10.1103/PhysRevMaterials.3.094001
TI - Shallow and deep levels in carbon-doped hexagonal boron nitride crystals
T2 - Physical Review Materials
AU - Pelini, T.
AU - Elias, C.
AU - PAGE, R.
AU - Xue, Lianjie
AU - Liu, Shuai
AU - Li, J.
AU - Edgar, James H.
AU - Dréau, A.
AU - Jacques, V.
AU - Valvin, Pierre
AU - Gil, Bernard
AU - Cassabois, Guillaume
PY - 2019
DA - 2019/09/05
PB - American Physical Society (APS)
IS - 9
VL - 3
SN - 2475-9953
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2019_Pelini,
author = {T. Pelini and C. Elias and R. PAGE and Lianjie Xue and Shuai Liu and J. Li and James H. Edgar and A. Dréau and V. Jacques and Pierre Valvin and Bernard Gil and Guillaume Cassabois},
title = {Shallow and deep levels in carbon-doped hexagonal boron nitride crystals},
journal = {Physical Review Materials},
year = {2019},
volume = {3},
publisher = {American Physical Society (APS)},
month = {sep},
url = {https://doi.org/10.1103/PhysRevMaterials.3.094001},
number = {9},
pages = {094001},
doi = {10.1103/PhysRevMaterials.3.094001}
}