Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles
1
LED Production Division, Nichia Corporation, Anan, Japan
|
2
University of Tokushima, Tokushima, Japan
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Publication type: Journal Article
Publication date: 2010-12-01
SJR: —
CiteScore: —
Impact factor: —
ISSN: 15213331, 15579972
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Abstract
Die-bonding for a nitride light-emitting diode (LED) by sintering of micrometer size Ag particles in air at 200°C was investigated. Micrometer size Ag particles absorb oxygen remarkably well at 200°C and above, and on sintering, they form a porous layer. The activating temperature of the sintering is in good agreement with the oxygen adsorption temperature. Sintering does not progress in the absence of oxygen. A reduction of thermal resistance and an improvement of reliability are achieved by the sintered layer as a die attach to a surface-mount-type LED. This mounting method is useful in the die bonding of electronic components, and is an alternative technique to high-temperature lead soldering.
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Metrics
46
Total citations:
46
Citations from 2024:
5
(10.87%)
The most citing journal
Citations in journal:
8
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MLA
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GOST
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Kuramot M. et al. Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles // IEEE Transactions on Components and Packaging Technologies. 2010. Vol. 33. No. 4. pp. 801-808.
GOST all authors (up to 50)
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Kuramot M., OGAWA S., Niwa M., Kim K., Suganuma K. Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles // IEEE Transactions on Components and Packaging Technologies. 2010. Vol. 33. No. 4. pp. 801-808.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1109/tcapt.2010.2064313
UR - https://doi.org/10.1109/tcapt.2010.2064313
TI - Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles
T2 - IEEE Transactions on Components and Packaging Technologies
AU - Kuramot, Masafumi
AU - OGAWA, SATORU
AU - Niwa, Miki
AU - Kim, Keun-Soo
AU - Suganuma, Katsuaki
PY - 2010
DA - 2010/12/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 801-808
IS - 4
VL - 33
SN - 1521-3331
SN - 1557-9972
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2010_Kuramot,
author = {Masafumi Kuramot and SATORU OGAWA and Miki Niwa and Keun-Soo Kim and Katsuaki Suganuma},
title = {Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles},
journal = {IEEE Transactions on Components and Packaging Technologies},
year = {2010},
volume = {33},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {dec},
url = {https://doi.org/10.1109/tcapt.2010.2064313},
number = {4},
pages = {801--808},
doi = {10.1109/tcapt.2010.2064313}
}
Cite this
MLA
Copy
Kuramot, Masafumi, et al. “Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles.” IEEE Transactions on Components and Packaging Technologies, vol. 33, no. 4, Dec. 2010, pp. 801-808. https://doi.org/10.1109/tcapt.2010.2064313.