Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma
Тип публикации: Journal Article
Дата публикации: 2001-01-01
SCImago Q1
WOS Q2
БС1
SJR: 0.809
CiteScore: 6.5
Impact factor: 3.6
ISSN: 00189383, 15579646
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Краткое описание
This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O/sub 2/ mixed high-density microwave-excited plasma at 400/spl deg/C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap density and bulk charge enough to replace thermally grown silicon oxide.
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ГОСТ
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Sekine K. et al. Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma // IEEE Transactions on Electron Devices. 2001. Vol. 48. No. 8. pp. 1550-1555.
ГОСТ со всеми авторами (до 50)
Скопировать
Sekine K., Saito Y., Hirayama M., Ohmi T. Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma // IEEE Transactions on Electron Devices. 2001. Vol. 48. No. 8. pp. 1550-1555.
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RIS
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TY - JOUR
DO - 10.1109/16.936559
UR - https://doi.org/10.1109/16.936559
TI - Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma
T2 - IEEE Transactions on Electron Devices
AU - Sekine, K.
AU - Saito, Y.
AU - Hirayama, M.
AU - Ohmi, T.
PY - 2001
DA - 2001/01/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 1550-1555
IS - 8
VL - 48
SN - 0018-9383
SN - 1557-9646
ER -
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BibTex (до 50 авторов)
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@article{2001_Sekine,
author = {K. Sekine and Y. Saito and M. Hirayama and T. Ohmi},
title = {Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma},
journal = {IEEE Transactions on Electron Devices},
year = {2001},
volume = {48},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jan},
url = {https://doi.org/10.1109/16.936559},
number = {8},
pages = {1550--1555},
doi = {10.1109/16.936559}
}
Цитировать
MLA
Скопировать
Sekine, K., et al. “Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma.” IEEE Transactions on Electron Devices, vol. 48, no. 8, Jan. 2001, pp. 1550-1555. https://doi.org/10.1109/16.936559.
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