Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating
1
Inst. of Radioelectron., Acad. of Sci., Moscow, Russia
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2
Russian Academy of Science, Moscow, Russia
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Publication type: Journal Article
Publication date: 1997-06-01
scimago Q2
wos Q3
SJR: 0.508
CiteScore: 3.4
Impact factor: 1.8
ISSN: 10518223, 15582515, 23787074
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub sg//R/sub n//spl ap/6.0, current density measured at the gap current rise J/sub g//spl ap/1.5 kA/cm/sup 2/. The (111)-textured NbN with transition temperature T/sub c//spl ap/16 K have been deposited at ambient substrate temperature. Phase composition and structure of the NbN films were investigated by X-ray diffraction analysis (XRD). It was found that the films have a structure close to the cubic /spl delta/-NbN (JCPDS card N38-11556) and the phase composition and intrinsic stress in NbN depend on Ar and N/sub 2/ partial pressure during DC magnetron sputtering. Cross-sectional TEM analysis showed that in-situ deposition of thin Al layer in the base Nb/Al/NbN electrode provides effective planarization of its surface and the result in improvement of tunnel junction parameters.
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Iosad N. et al. Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating // IEEE Transactions on Applied Superconductivity. 1997. Vol. 7. No. 2. pp. 2805-2808.
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Iosad N., Balashov D., Kupriyanov M. Y., Поляков С. Н., Roddatis V. V. Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating // IEEE Transactions on Applied Superconductivity. 1997. Vol. 7. No. 2. pp. 2805-2808.
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RIS
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TY - JOUR
DO - 10.1109/77.621820
UR - https://doi.org/10.1109/77.621820
TI - Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating
T2 - IEEE Transactions on Applied Superconductivity
AU - Iosad, N.N
AU - Balashov, D.V
AU - Kupriyanov, Mikhail Yu.
AU - Поляков, С. Н.
AU - Roddatis, V. V.
PY - 1997
DA - 1997/06/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 2805-2808
IS - 2
VL - 7
SN - 1051-8223
SN - 1558-2515
SN - 2378-7074
ER -
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BibTex (up to 50 authors)
Copy
@article{1997_Iosad,
author = {N.N Iosad and D.V Balashov and Mikhail Yu. Kupriyanov and С. Н. Поляков and V. V. Roddatis},
title = {Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating},
journal = {IEEE Transactions on Applied Superconductivity},
year = {1997},
volume = {7},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jun},
url = {https://doi.org/10.1109/77.621820},
number = {2},
pages = {2805--2808},
doi = {10.1109/77.621820}
}
Cite this
MLA
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Iosad, N.N, et al. “Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating.” IEEE Transactions on Applied Superconductivity, vol. 7, no. 2, Jun. 1997, pp. 2805-2808. https://doi.org/10.1109/77.621820.
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