volume 7 issue 2 pages 2805-2808

Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

N.N Iosad 1
D.V Balashov 2
С. Н. Поляков 3
V. V. Roddatis 4
Publication typeJournal Article
Publication date1997-06-01
scimago Q2
wos Q3
SJR0.508
CiteScore3.4
Impact factor1.8
ISSN10518223, 15582515, 23787074
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub sg//R/sub n//spl ap/6.0, current density measured at the gap current rise J/sub g//spl ap/1.5 kA/cm/sup 2/. The (111)-textured NbN with transition temperature T/sub c//spl ap/16 K have been deposited at ambient substrate temperature. Phase composition and structure of the NbN films were investigated by X-ray diffraction analysis (XRD). It was found that the films have a structure close to the cubic /spl delta/-NbN (JCPDS card N38-11556) and the phase composition and intrinsic stress in NbN depend on Ar and N/sub 2/ partial pressure during DC magnetron sputtering. Cross-sectional TEM analysis showed that in-situ deposition of thin Al layer in the base Nb/Al/NbN electrode provides effective planarization of its surface and the result in improvement of tunnel junction parameters.
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Iosad N. et al. Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating // IEEE Transactions on Applied Superconductivity. 1997. Vol. 7. No. 2. pp. 2805-2808.
GOST all authors (up to 50) Copy
Iosad N., Balashov D., Kupriyanov M. Y., Поляков С. Н., Roddatis V. V. Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating // IEEE Transactions on Applied Superconductivity. 1997. Vol. 7. No. 2. pp. 2805-2808.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1109/77.621820
UR - https://doi.org/10.1109/77.621820
TI - Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating
T2 - IEEE Transactions on Applied Superconductivity
AU - Iosad, N.N
AU - Balashov, D.V
AU - Kupriyanov, Mikhail Yu.
AU - Поляков, С. Н.
AU - Roddatis, V. V.
PY - 1997
DA - 1997/06/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 2805-2808
IS - 2
VL - 7
SN - 1051-8223
SN - 1558-2515
SN - 2378-7074
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{1997_Iosad,
author = {N.N Iosad and D.V Balashov and Mikhail Yu. Kupriyanov and С. Н. Поляков and V. V. Roddatis},
title = {Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating},
journal = {IEEE Transactions on Applied Superconductivity},
year = {1997},
volume = {7},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jun},
url = {https://doi.org/10.1109/77.621820},
number = {2},
pages = {2805--2808},
doi = {10.1109/77.621820}
}
MLA
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MLA Copy
Iosad, N.N, et al. “Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating.” IEEE Transactions on Applied Superconductivity, vol. 7, no. 2, Jun. 1997, pp. 2805-2808. https://doi.org/10.1109/77.621820.