Institute of Electrical and Electronics Engineers (IEEE)

Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM

Тип публикации: Proceedings Article

Дата публикации: 2020-06-01

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/VLSITechnology18217.2020.9265042

Краткое описание

In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].

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Institute of Electrical and Electronics Engineers (IEEE)

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