N Yu Dmitriev
1
,
A M Mumlyakov
2
,
M V Shibalov
2
,
I V Trofimov
2
,
I A Filippov
2
,
A.A. Anikanov
2
,
M. A. Tarkhov
2
,
I. A. Bilenko
1
Publication type: Proceedings Article
Publication date: 2024-07-01
Abstract
We demonstrate characteristics of high-Q ring silicon nitride microresonators fabricated with novel PECVD process. Proposed process allows to fabricate silicon nitride waveguides with thickness over 1 um. Studied 1um-thick silicon nitride ring microresontors features anomalous GVD and loaded Q factor over 1 million.
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