IEEE Transactions on Terahertz Science and Technology, volume 12, issue 3, pages 226-244
Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review
Publication type: Journal Article
Publication date: 2022-05-01
Q1
Q2
SJR: 0.974
CiteScore: 7.1
Impact factor: 3.9
ISSN: 2156342X, 21563446
Electrical and Electronic Engineering
Radiation
Abstract
Resonant tunneling diode (RTD) technology is emerging as one of the promising semiconductor-based solid-state technologies for terahertz (THz) wireless communications. This article provides a review of the state of the art, with a focus on the THz RTD oscillator, which is the key component of RTD-based THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modeling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilize an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The article concludes with a discussion of the current technical challenges and possible strategies for future progress.
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Cimbri D. et al. Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review // IEEE Transactions on Terahertz Science and Technology. 2022. Vol. 12. No. 3. pp. 226-244.
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Cimbri D., Wang J., Al‐Khalidi A., Wasige E. Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review // IEEE Transactions on Terahertz Science and Technology. 2022. Vol. 12. No. 3. pp. 226-244.
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TY - JOUR
DO - 10.1109/tthz.2022.3142965
UR - https://doi.org/10.1109/tthz.2022.3142965
TI - Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review
T2 - IEEE Transactions on Terahertz Science and Technology
AU - Cimbri, D
AU - Wang, Jue
AU - Al‐Khalidi, Abdullah
AU - Wasige, E.
PY - 2022
DA - 2022/05/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 226-244
IS - 3
VL - 12
SN - 2156-342X
SN - 2156-3446
ER -
Cite this
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@article{2022_Cimbri,
author = {D Cimbri and Jue Wang and Abdullah Al‐Khalidi and E. Wasige},
title = {Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review},
journal = {IEEE Transactions on Terahertz Science and Technology},
year = {2022},
volume = {12},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {may},
url = {https://doi.org/10.1109/tthz.2022.3142965},
number = {3},
pages = {226--244},
doi = {10.1109/tthz.2022.3142965}
}
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MLA
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Cimbri, D., et al. “Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review.” IEEE Transactions on Terahertz Science and Technology, vol. 12, no. 3, May. 2022, pp. 226-244. https://doi.org/10.1109/tthz.2022.3142965.