Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, volume 37, issue 2, pages 22903
Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters
Demin Gleb
1
,
Demin Gleb D
1
,
Djuzhev Nikolay A.
1
,
Filippov Nikolay A
1
,
Filippov N. N.
1
,
Glagolev Petr Yu.
1
,
Evsikov Iliya D.
1
,
Patyukov Nikolay N.
1
Publication type: Journal Article
Publication date: 2019-02-11
Quartile SCImago
Q2
Quartile WOS
Q4
Impact factor: 1.4
ISSN: 21662746, 21662754
Materials Chemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Process Chemistry and Technology
Electrical and Electronic Engineering
Instrumentation
Abstract
The reproducibility of complementary metal-oxide-semiconductor (CMOS) technology makes it very promising for creating commercially available vacuum emission micro/nanoelectronic devices. However, there are a number of challenges that occur with CMOS, including current hysteresis, transition to the generation of self-sustained plasma, and thermal melting of the cathode. These issues affect the process of field-electron emission and lead to instability and subsequent degradation of field-emission cathodes. More detailed study is needed in order to address these negative effects. In this study, an array of nanoscale silicon needle-type cathodes and a single blade-type cathode were placed in vacuum to characterize their field-emission properties. The hysteresis nature of the field-emission current and the smooth transition from field emission to the generation of self-sustained plasma in the interelectrode space were simultaneously observed. Based on these experimental results, the authors propose the possible origins and mechanisms underlying these two phenomena. It was theoretically found that at field-emission currents corresponding to the observed melting point of the silicon nanocathodes, the melting point of silicon is not reached, which indicates the need to take into account additional effects of field emission, such as sputtering of the anode material. The results are useful for developing field-emission nanodevices based on silicon CMOS technology.The reproducibility of complementary metal-oxide-semiconductor (CMOS) technology makes it very promising for creating commercially available vacuum emission micro/nanoelectronic devices. However, there are a number of challenges that occur with CMOS, including current hysteresis, transition to the generation of self-sustained plasma, and thermal melting of the cathode. These issues affect the process of field-electron emission and lead to instability and subsequent degradation of field-emission cathodes. More detailed study is needed in order to address these negative effects. In this study, an array of nanoscale silicon needle-type cathodes and a single blade-type cathode were placed in vacuum to characterize their field-emission properties. The hysteresis nature of the field-emission current and the smooth transition from field emission to the generation of self-sustained plasma in the interelectrode space were simultaneously observed. Based on these experimental results, the authors propose the possibl...
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Demin G. D. et al. Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters // Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2019. Vol. 37. No. 2. p. 22903.
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Demin G. D., Demin G., Djuzhev N. A., Filippov N. A., Filippov N. N., Glagolev P. Y., Evsikov I. D., Patyukov N. N. Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters // Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2019. Vol. 37. No. 2. p. 22903.
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TY - JOUR
DO - 10.1116/1.5068688
UR - https://doi.org/10.1116%2F1.5068688
TI - Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters
T2 - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
AU - Demin, Gleb D
AU - Djuzhev, Nikolay A.
AU - Filippov, Nikolay A
AU - Glagolev, Petr Yu.
AU - Evsikov, Iliya D.
AU - Patyukov, Nikolay N.
AU - Demin, Gleb
AU - Filippov, N. N.
PY - 2019
DA - 2019/02/11 00:00:00
PB - American Vacuum Society
SP - 22903
IS - 2
VL - 37
SN - 2166-2746
SN - 2166-2754
ER -
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@article{2019_Demin,
author = {Gleb D Demin and Nikolay A. Djuzhev and Nikolay A Filippov and Petr Yu. Glagolev and Iliya D. Evsikov and Nikolay N. Patyukov and Gleb Demin and N. N. Filippov},
title = {Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters},
journal = {Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics},
year = {2019},
volume = {37},
publisher = {American Vacuum Society},
month = {feb},
url = {https://doi.org/10.1116%2F1.5068688},
number = {2},
pages = {22903},
doi = {10.1116/1.5068688}
}
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Demin, Gleb D., et al. “Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters.” Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 37, no. 2, Feb. 2019, p. 22903. https://doi.org/10.1116%2F1.5068688.
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