Modeling and development of nano- and microsystem technology devices (NIL MR)
Publications
69
Citations
155
h-index
6
Authorization required.
The laboratory is engaged in the design and development of nanoelectronics devices: spintronic devices, vacuum nanoelectronic devices, sensor elements, MEMS, as well as exploratory work in the field of X-ray lithography.
Research directions
Neuromorphic spintronics: designing the element base
Silicon vacuum transistors with a nanoscale conduction channel
Magnetic tunneling heterostructures for spintronic devices
Nanoelectromechanical systems based on thin-film membrane elements
Spin dynamics in amorphous ferromagnetic films under conditions of excitation of the giant magnetoimpedance effect
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Publications and patents
Partners
Lab address
Москва, Зеленоград, площадь Шокина, 1
Authorization required.