Modeling and development of nano- and microsystem technology devices (NIL MR)
Authorization required.
The laboratory is engaged in the design and development of nanoelectronics devices: spintronic devices, vacuum nanoelectronic devices, sensor elements, MEMS, as well as exploratory work in the field of X-ray lithography.
- Mathematical and physical modeling
- Micromagnetic modeling
- Atomic modeling
- Instrument and technological modeling
- Molecular dynamics and quantum chemical calculations
- Quantum mechanical ab initio calculations in quantum chemistry and solid state physics
Tatiana Ryndina
Lead Engineer
Pavel Kim
Engineer
Anastasiya Fedina
Engineer
Vasiliy Koshelev
PhD student
Bogdan Lobanov
Research assistant
Research directions
Neuromorphic spintronics: designing the element base
Silicon vacuum transistors with a nanoscale conduction channel
Magnetic tunneling heterostructures for spintronic devices
Nanoelectromechanical systems based on thin-film membrane elements
Spin dynamics in amorphous ferromagnetic films under conditions of excitation of the giant magnetoimpedance effect
+
The research is devoted to the search for the optimal design and composition of the sensing element based on thin-film amorphous ferromagnetic structures operating in the mode of nonlinear giant magnetoimpedance
Publications and patents
Петр Юрьевич Глаголев, Николай Алексеевич Дюжев, Глеб Дмитриевич Демин, Анна Александровна Дедкова, Евгений Эдуардович Гусев
RU2775268C1,
2022
2023
—
2025
| Устинов Константин Борисович
Partners
Lab address
Москва, Зеленоград, площадь Шокина, 1
Authorization required.