Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, volume 37, issue 6, pages 61306

Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication

Daniel Staaks 1, 2, 3, 4
Zhaoning Yu 5, 6
Scott D. Dhuey 1, 3
Scott Dhuey 1
Simone Sassolini 1, 3
Kim Y. Lee 5, 6
Ivo Rangelow 2, 4
Deirdre L. Olynick 1, 3
Publication typeJournal Article
Publication date2019-11-01
scimago Q2
SJR0.569
CiteScore5.1
Impact factor2.4
ISSN07342101, 15208559
Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces
Abstract
Chromium and its oxides are valuable as functional materials and plasma-etching hard masks in micro- and nanofabrication. While the continuous decrease in feature sizes opens new opportunities for applications of patterned chromium, the demands placed on the patterning process require a new level of mechanistic understanding. In this work, we investigate plasma etching with chlorine/oxygen chemistry using temperature and oxygen concentration as a means to controllably pattern chromium at the nanometer level. Building on our previous studies on blanket film chromium etching, we look here at patterned trenches 15–100 nm wide in 20 and 10 nm thick chromium films. We vary oxygen concentrations from 1.5% to 81% at substrate temperatures of +20 and −50 °C, respectively. Feature and trench profiles are evaluated from high-resolution cross-sectional SEM images. The ternary chromium etch product shows very different profiles as oxygen, temperature, and feature size are varied. We find the highest anisotropy at −50 °C and 50% oxygen concentration. Etch results suggest that the redeposition of nonvolatile intermediate reaction compounds enhances anisotropy at low temperature, whereas re-emission of reactive species causes undercut at the higher etching temperature.Chromium and its oxides are valuable as functional materials and plasma-etching hard masks in micro- and nanofabrication. While the continuous decrease in feature sizes opens new opportunities for applications of patterned chromium, the demands placed on the patterning process require a new level of mechanistic understanding. In this work, we investigate plasma etching with chlorine/oxygen chemistry using temperature and oxygen concentration as a means to controllably pattern chromium at the nanometer level. Building on our previous studies on blanket film chromium etching, we look here at patterned trenches 15–100 nm wide in 20 and 10 nm thick chromium films. We vary oxygen concentrations from 1.5% to 81% at substrate temperatures of +20 and −50 °C, respectively. Feature and trench profiles are evaluated from high-resolution cross-sectional SEM images. The ternary chromium etch product shows very different profiles as oxygen, temperature, and feature size are varied. We find the highest anisotropy at −50...
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