Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, volume 40, issue 5, pages 52601
Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas
G. Antoun
1, 2
,
T. Tillocher
1, 2
,
A. Girard
3, 4
,
P. Lefaucheux
1, 2
,
J. Faguet
5, 6
,
H. Kim
7, 8
,
D. Zhang
7, 8
,
M Wang
7, 8
,
K. Maekawa
7, 8
,
C. Cardinaud
3, 4
,
R. Dussart
1, 2
3
5
Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741
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6
Tokyo Electron America, Inc. 3 , 2400 Grove Blvd., Austin, Texas 78741
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7
TEL Technology Center, America, LLC, NanoFab 300 South 255 Fuller Rd., Suite 214, Albany, New York 12203
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8
TEL Technology Center, America, LLC 4 , NanoFab 300 South 255 Fuller Rd., Suite 214, Albany, New York 12203
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Publication type: Journal Article
Publication date: 2022-08-26
scimago Q2
SJR: 0.569
CiteScore: 5.1
Impact factor: 2.4
ISSN: 07342101, 15208559
Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces
Abstract
This article first presents quasi- in situ XPS measurements on Si3N4 and a-Si samples after exposure to an SiF4/O2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at −65 °C, which has led to the development of a time-multiplexed process for nanoscale etching. This study clearly shows the possibility to switch from a deposition regime to an etching regime by decreasing the temperature. The threshold temperature between these regimes being different for both materials, it was possible to perform selective etching of Si3N4 over a-Si by wisely choosing the temperature.
Found
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