Open Access
Open access
Science, volume 310, issue 5745, pages 86-89

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

Dmitri V. Talapin 1
Christopher B. Murray 1
1
 
IBM Research Division, T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA.
Publication typeJournal Article
Publication date2005-10-07
Journal: Science
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor56.9
ISSN00368075, 10959203
Multidisciplinary
Abstract

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically “activated” to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 10 3 to 10 4 ; and with current density approaching 3 × 10 4 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

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GOST |
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GOST Copy
Talapin D. V., Murray C. B. PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors // Science. 2005. Vol. 310. No. 5745. pp. 86-89.
GOST all authors (up to 50) Copy
Talapin D. V., Murray C. B. PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors // Science. 2005. Vol. 310. No. 5745. pp. 86-89.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1126/science.1116703
UR - https://doi.org/10.1126/science.1116703
TI - PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors
T2 - Science
AU - Talapin, Dmitri V.
AU - Murray, Christopher B.
PY - 2005
DA - 2005/10/07 00:00:00
PB - American Association for the Advancement of Science (AAAS)
SP - 86-89
IS - 5745
VL - 310
SN - 0036-8075
SN - 1095-9203
ER -
BibTex |
Cite this
BibTex Copy
@article{2005_Talapin,
author = {Dmitri V. Talapin and Christopher B. Murray},
title = {PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors},
journal = {Science},
year = {2005},
volume = {310},
publisher = {American Association for the Advancement of Science (AAAS)},
month = {oct},
url = {https://doi.org/10.1126/science.1116703},
number = {5745},
pages = {86--89},
doi = {10.1126/science.1116703}
}
MLA
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MLA Copy
Talapin, Dmitri V., and Christopher B. Murray. “PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors.” Science, vol. 310, no. 5745, Oct. 2005, pp. 86-89. https://doi.org/10.1126/science.1116703.
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