Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
Publication type: Journal Article
Publication date: 1997-02-01
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric parameters of the structure has made it possible to increase the range of ultrahigh thermal stability in the threshold current (the characteristic temperature is T 0=385 K) up to 50 °C.
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Total citations:
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Citations from 2024:
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GOST
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Maksimov M. et al. Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C // Semiconductors. 1997. Vol. 31. No. 2. pp. 124-126.
GOST all authors (up to 50)
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Maksimov M., Gordeev N., ZAITSEV S. V., KOP'EV P. S., Kochnev I., LEDENTSOV N. N., Lunev A. V., Ruvimov S., Sakharov A., TSATSUL'NIKOV A. F., Shernyakov Y., Alferov Z. I., BIMBERG D. Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C // Semiconductors. 1997. Vol. 31. No. 2. pp. 124-126.
Cite this
RIS
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TY - JOUR
DO - 10.1134/1.1187093
UR - https://doi.org/10.1134/1.1187093
TI - Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
T2 - Semiconductors
AU - Maksimov, M.V.
AU - Gordeev, N.Yu.
AU - ZAITSEV, S. V.
AU - KOP'EV, P. S.
AU - Kochnev, I.V.
AU - LEDENTSOV, N. N.
AU - Lunev, A V
AU - Ruvimov, S.S.
AU - Sakharov, A.V.
AU - TSATSUL'NIKOV, A. F.
AU - Shernyakov, Yu.M.
AU - Alferov, Zh. I.
AU - BIMBERG, D.
PY - 1997
DA - 1997/02/01
PB - Pleiades Publishing
SP - 124-126
IS - 2
VL - 31
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{1997_Maksimov,
author = {M.V. Maksimov and N.Yu. Gordeev and S. V. ZAITSEV and P. S. KOP'EV and I.V. Kochnev and N. N. LEDENTSOV and A V Lunev and S.S. Ruvimov and A.V. Sakharov and A. F. TSATSUL'NIKOV and Yu.M. Shernyakov and Zh. I. Alferov and D. BIMBERG},
title = {Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C},
journal = {Semiconductors},
year = {1997},
volume = {31},
publisher = {Pleiades Publishing},
month = {feb},
url = {https://doi.org/10.1134/1.1187093},
number = {2},
pages = {124--126},
doi = {10.1134/1.1187093}
}
Cite this
MLA
Copy
Maksimov, M.V., et al. “Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C.” Semiconductors, vol. 31, no. 2, Feb. 1997, pp. 124-126. https://doi.org/10.1134/1.1187093.