Semiconductors, volume 31, issue 2, pages 124-126

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

M.V. Maksimov ¹

N.Yu. Gordeev ¹

S. V. ZAITSEV ¹

P. S. KOP'EV ¹

I.V. Kochnev ¹

N. N. LEDENTSOV ¹

A V Lunev ¹

S.S. Ruvimov ¹

A.V. Sakharov ¹

A. F. TSATSUL'NIKOV ¹

Yu.M. Shernyakov ¹

Zh. I. Alferov ¹

D. BIMBERG ²

Show full list: 13 authors

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A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia |

Technische Universität Berling, Berling, Germany |

Publication type: Journal Article

Publication date: 1997-02-01

Pleiades Publishing

Journal: Semiconductors

scimago Q4

wos Q4

SJR: 0.173

CiteScore: 1.5

Impact factor: 0.6

ISSN: 10637826, 10906479, 17267315, 09412751

DOI: 10.1134/1.1187093

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Electronic, Optical and Magnetic Materials

Atomic and Molecular Physics, and Optics

Condensed Matter Physics

Abstract

Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric parameters of the structure has made it possible to increase the range of ultrahigh thermal stability in the threshold current (the characteristic temperature is T 0=385 K) up to 50 °C.

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Publisher

Pleiades Publishing

Journal

Semiconductors

scimago Q4

wos Q4

SJR

0.173

CiteScore

1.5

Impact factor

0.6

ISSN

10637826 (Print)

10906479 (Electronic)

17267315 (Print)

09412751 (Print)

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

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