Semiconductors, volume 51, issue 3, pages 387-391
Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters
Publication type: Journal Article
Publication date: 2017-03-15
Journal:
Semiconductors
Quartile SCImago
Q3
Quartile WOS
Q4
Impact factor: 0.7
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman spectroscopy. The application of Al0.3Ga0.7As and GaP films as wide-gap windows of silicon photoelectric converters is examined. The spectral characteristics of photocells based on Al0.3Ga0.7As/Si and GaP/Si heterostructures are studied. The heterostructures can be used as the first p–n junction of a Si-based multijunction photoelectric converter.
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Citations by publishers
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Pleiades Publishing
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3 publications, 27.27%
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2 publications, 18.18%
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2 publications, 18.18%
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1 publication, 9.09%
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FSUE VNIIMS All-Russian Research Institute of Metrological Service
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FSUE VNIIMS All-Russian Research Institute of Metrological Service, 1, 9.09%
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1 publication, 9.09%
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1
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Lunin L. S. L. S. et al. Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters // Semiconductors. 2017. Vol. 51. No. 3. pp. 387-391.
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Lunin L. S. L. S., Lunina M. L. M. L., Devitsky O.V. O. V., Sysoev I. A. Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters // Semiconductors. 2017. Vol. 51. No. 3. pp. 387-391.
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TY - JOUR
DO - 10.1134/S1063782617030174
UR - https://doi.org/10.1134%2FS1063782617030174
TI - Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters
T2 - Semiconductors
AU - Lunin L. S., L. S.
AU - Lunina M. L., M. L.
AU - Devitsky O.V., O. V.
AU - Sysoev, I. A.
PY - 2017
DA - 2017/03/15 00:00:00
PB - Pleiades Publishing
SP - 387-391
IS - 3
VL - 51
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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@article{2017_Lunin L. S.,
author = {L. S. Lunin L. S. and M. L. Lunina M. L. and O. V. Devitsky O.V. and I. A. Sysoev},
title = {Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters},
journal = {Semiconductors},
year = {2017},
volume = {51},
publisher = {Pleiades Publishing},
month = {mar},
url = {https://doi.org/10.1134%2FS1063782617030174},
number = {3},
pages = {387--391},
doi = {10.1134/S1063782617030174}
}
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MLA
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Lunin L. S., L. S., et al. “Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters.” Semiconductors, vol. 51, no. 3, Mar. 2017, pp. 387-391. https://doi.org/10.1134%2FS1063782617030174.
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