Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics (Heterostructure Technology Research Group)

The laboratory was established on January 9, 2019. The main areas of activity are the study of the electrophysical properties of the developed semiconductor nanoheterostructures. - The study of the structural, optical and photoelectric properties of the developed semiconductor solid solutions. - Development of isovalently doped potential barriers based on solid solutions of group III- V compounds - Thermodynamic analysis of spinodal decays of solid solutions for their stability and ordering. - Development of methods for the synthesis of liquid phase, molecular, ionic and atomic beams of semiconductor solid solutions, as well as the creation of heterostructures based on them for optoelectronic and photonic devices. - Development of new semiconductor materials based on solid solutions of group III-V compounds. The use of multicomponent solid solutions based on AIIIBV semiconductor compounds in heterostructures is of increasing interest to researchers due to the unique capabilities of these materials. An advantageous advantage of five-component solid solutions over triple and quadruple ones is the possibility of independently changing the band gap width and the crystal lattice parameter. However, solid solutions are characterized by the presence of spinodal decay regions, which leads to limitations in their composition and band gap width. An increase in the number of components in the composition of solid solutions undoubtedly leads to a change in the structural and optical properties of such heterostructures and methods of their design. Therefore, the synthesis of new materials based on solid solutions and the creation of semiconductor heterointerfaces based on them is an important task for condensed matter physics and physics of semiconductor devices. In this regard, the main activities of the laboratory include: