Technical Physics Letters, volume 46, issue 7, pages 665-668
Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect
Tarasov A.S.
1, 2
,
Lukyanenko A V
1, 2
,
Bondarev I A
1, 2
,
Yakovlev I.A.
1
,
Varnakov S. N.
1
,
Ovchinnikov S. G.
1, 2
,
Volkov N.V.
1, 2
Publication type: Journal Article
Publication date: 2020-07-01
Journal:
Technical Physics Letters
Quartile SCImago
Q3
Quartile WOS
Q4
Impact factor: 0.6
ISSN: 10637850, 10906533, 17267471
Physics and Astronomy (miscellaneous)
Abstract
The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.
Citations by journals
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1
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Bulletin of the Russian Academy of Sciences: Physics
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Bulletin of the Russian Academy of Sciences: Physics
1 publication, 100%
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1
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Citations by publishers
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1
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Pleiades Publishing
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Pleiades Publishing
1 publication, 100%
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1
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Tarasov A. et al. Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect // Technical Physics Letters. 2020. Vol. 46. No. 7. pp. 665-668.
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Tarasov A., Lukyanenko A. V., Bondarev I. A., Yakovlev I., Varnakov S. N., Ovchinnikov S. G., Volkov N. Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect // Technical Physics Letters. 2020. Vol. 46. No. 7. pp. 665-668.
Cite this
RIS
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TY - JOUR
DO - 10.1134/S1063785020070135
UR - https://doi.org/10.1134%2FS1063785020070135
TI - Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect
T2 - Technical Physics Letters
AU - Tarasov, A.S.
AU - Lukyanenko, A V
AU - Bondarev, I A
AU - Yakovlev, I.A.
AU - Varnakov, S. N.
AU - Ovchinnikov, S. G.
AU - Volkov, N.V.
PY - 2020
DA - 2020/07/01 00:00:00
PB - Pleiades Publishing
SP - 665-668
IS - 7
VL - 46
SN - 1063-7850
SN - 1090-6533
SN - 1726-7471
ER -
Cite this
BibTex
Copy
@article{2020_Tarasov,
author = {A.S. Tarasov and A V Lukyanenko and I A Bondarev and I.A. Yakovlev and S. N. Varnakov and S. G. Ovchinnikov and N.V. Volkov},
title = {Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect},
journal = {Technical Physics Letters},
year = {2020},
volume = {46},
publisher = {Pleiades Publishing},
month = {jul},
url = {https://doi.org/10.1134%2FS1063785020070135},
number = {7},
pages = {665--668},
doi = {10.1134/S1063785020070135}
}
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MLA
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Tarasov, A.S., et al. “Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect.” Technical Physics Letters, vol. 46, no. 7, Jul. 2020, pp. 665-668. https://doi.org/10.1134%2FS1063785020070135.
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