JETP Letters, volume 115, issue 5, pages 286-291
Electronic Structure of Magnetic Topological Insulators Mn(Bi1 – x Sb x )2 Te4 with Various Concentration of Sb Atoms
Glazkova D. A.
1
,
Estyunin D A
1
,
Klimovskikh I I
1, 2
,
Makarova T P
1
,
Tereshchenko O E
3, 4, 5
,
Kokh K. A.
5, 6, 7
,
Golyashov V A
3, 4, 5
,
Koroleva A V
1
,
Publication type: Journal Article
Publication date: 2022-03-01
Journal:
JETP Letters
Quartile SCImago
Q2
Quartile WOS
Q4
Impact factor: 1.3
ISSN: 00213640, 10906487
Physics and Astronomy (miscellaneous)
Abstract
Intrinsic magnetic topological insulator MnBi2Te4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening at the Dirac point should be located at the Fermi level. One of the widely used methods to shift the Dirac point toward the Fermi level is the partial substitution of Bi atoms for Sb atoms. In this work, the electronic structure of the core levels and valence band of Mn(Bi1 –xSbx)2Te4 compounds with various concentration x of Sb atoms from 0 to 1 has been studied. It has been shown that the Dirac point with an increase in the concentration of Sb atoms is shifted toward the Fermi level and becomes localized at it when x ≈ 0.3. In this case, the “rigid” shift of the valence band, including the Mn 3d level, has been observed without changes in the structure of the valence and conduction bands. The concentration dependence of the shift of the Dirac point is approximated by a square root function, which corresponds to a linear increase in the charge carrier density.
Citations by journals
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2
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JETP Letters
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JETP Letters
2 publications, 40%
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Journal of Physical Chemistry Letters
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Journal of Physical Chemistry Letters
1 publication, 20%
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Symmetry
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Symmetry
1 publication, 20%
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Acta Physica Sinica
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Acta Physica Sinica
1 publication, 20%
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2
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Citations by publishers
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Pleiades Publishing
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Pleiades Publishing
2 publications, 40%
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American Chemical Society (ACS)
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American Chemical Society (ACS)
1 publication, 20%
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Multidisciplinary Digital Publishing Institute (MDPI)
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 20%
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Chinese Physical Society
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Chinese Physical Society
1 publication, 20%
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1
2
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- We do not take into account publications that without a DOI.
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- Statistics recalculated weekly.
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Glazkova D. A. et al. Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms // JETP Letters. 2022. Vol. 115. No. 5. pp. 286-291.
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Glazkova D. A., Estyunin D. A., Klimovskikh I. I., Makarova T. P., Tereshchenko O. E., Kokh K. A., Golyashov V. A., Koroleva A. V., SHIKIN A. M. Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms // JETP Letters. 2022. Vol. 115. No. 5. pp. 286-291.
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TY - JOUR
DO - 10.1134/S0021364022100083
UR - https://doi.org/10.1134%2FS0021364022100083
TI - Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms
T2 - JETP Letters
AU - Glazkova, D. A.
AU - Makarova, T P
AU - Tereshchenko, O E
AU - Kokh, K. A.
AU - Golyashov, V A
AU - Koroleva, A V
AU - Estyunin, D A
AU - Klimovskikh, I I
AU - SHIKIN, A. M.
PY - 2022
DA - 2022/03/01 00:00:00
PB - Pleiades Publishing
SP - 286-291
IS - 5
VL - 115
SN - 0021-3640
SN - 1090-6487
ER -
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@article{2022_Glazkova,
author = {D. A. Glazkova and T P Makarova and O E Tereshchenko and K. A. Kokh and V A Golyashov and A V Koroleva and D A Estyunin and I I Klimovskikh and A. M. SHIKIN},
title = {Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms},
journal = {JETP Letters},
year = {2022},
volume = {115},
publisher = {Pleiades Publishing},
month = {mar},
url = {https://doi.org/10.1134%2FS0021364022100083},
number = {5},
pages = {286--291},
doi = {10.1134/S0021364022100083}
}
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Glazkova, D. A., et al. “Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms.” JETP Letters, vol. 115, no. 5, Mar. 2022, pp. 286-291. https://doi.org/10.1134%2FS0021364022100083.
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