том 44 издание 5 страницы 616-622

Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

Тип публикацииJournal Article
Дата публикации2010-05-08
scimago Q4
wos Q4
БС3
SJR0.154
CiteScore0.9
Impact factor0.6
ISSN10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Краткое описание
Effects of persistent photoconductivity in InAs/AlSb heterostructures with the cap GaSb layer and two-dimensional electron gas in the InAs double quantum wells at T = 4.2 K are studied. From Fourier analysis of the Shubnikov-de Haas oscillations, electron concentrations in each quantum well are determined at various wavelengths of illumination and pronounced asymmetry of the structure caused by the built-in electric field is demonstrated explicitly. The self-consistent calculations of the energy profile of the double quantum well are performed and the concentrations of ionized donors on both sides of the well are determined, which provided concretization of the previously suggested mechanism of bipolar persistent photoconductivity in such structures.
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Semiconductors
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Journal of Applied Physics
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ГОСТ |
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Gavrilenko V. I. et al. Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells // Semiconductors. 2010. Vol. 44. No. 5. pp. 616-622.
ГОСТ со всеми авторами (до 50) Скопировать
Gavrilenko V. I., Ikonnikov A. V., Krishtopenko S. S., Lastovkin A. A., Marem’yanin K. V., Sadofyev Y., Spirin K. E. Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells // Semiconductors. 2010. Vol. 44. No. 5. pp. 616-622.
RIS |
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TY - JOUR
DO - 10.1134/S106378261005012X
UR - https://doi.org/10.1134/S106378261005012X
TI - Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells
T2 - Semiconductors
AU - Gavrilenko, V. I.
AU - Ikonnikov, A V
AU - Krishtopenko, S. S.
AU - Lastovkin, A A
AU - Marem’yanin, K. V.
AU - Sadofyev, Yu.G
AU - Spirin, K. E.
PY - 2010
DA - 2010/05/08
PB - Pleiades Publishing
SP - 616-622
IS - 5
VL - 44
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2010_Gavrilenko,
author = {V. I. Gavrilenko and A V Ikonnikov and S. S. Krishtopenko and A A Lastovkin and K. V. Marem’yanin and Yu.G Sadofyev and K. E. Spirin},
title = {Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells},
journal = {Semiconductors},
year = {2010},
volume = {44},
publisher = {Pleiades Publishing},
month = {may},
url = {https://doi.org/10.1134/S106378261005012X},
number = {5},
pages = {616--622},
doi = {10.1134/S106378261005012X}
}
MLA
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Gavrilenko, V. I., et al. “Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells.” Semiconductors, vol. 44, no. 5, May. 2010, pp. 616-622. https://doi.org/10.1134/S106378261005012X.