Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices
A.S. Tarasov
1, 2
,
A V Lukyanenko
1, 2
,
I A Bondarev
1, 2
,
M V Rautskii
1
,
F.A. Baron
1
,
T E Smolyarova
1, 2
,
I.A. Yakovlev
1
,
S. N. Varnakov
1
,
S. G. Ovchinnikov
1, 2
,
N.V. Volkov
1
1
Publication type: Journal Article
Publication date: 2018-12-27
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.
Found
Nothing found, try to update filter.
Found
Nothing found, try to update filter.
Top-30
Journals
|
1
|
|
|
Talanta
1 publication, 33.33%
|
|
|
Bulletin of the Russian Academy of Sciences: Physics
1 publication, 33.33%
|
|
|
Physics of Metals and Metallography
1 publication, 33.33%
|
|
|
1
|
Publishers
|
1
2
|
|
|
Pleiades Publishing
2 publications, 66.67%
|
|
|
Elsevier
1 publication, 33.33%
|
|
|
1
2
|
- We do not take into account publications without a DOI.
- Statistics recalculated weekly.
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
3
Total citations:
3
Citations from 2024:
1
(33.33%)
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Tarasov A. et al. Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices // Semiconductors. 2018. Vol. 52. No. 14. pp. 1875-1878.
GOST all authors (up to 50)
Copy
Tarasov A., Lukyanenko A. V., Bondarev I. A., Rautskii M. V., Baron F., Smolyarova T. E., Yakovlev I., Varnakov S. N., Ovchinnikov S. G., Volkov N. Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices // Semiconductors. 2018. Vol. 52. No. 14. pp. 1875-1878.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1134/S1063782618140312
UR - https://doi.org/10.1134/S1063782618140312
TI - Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices
T2 - Semiconductors
AU - Tarasov, A.S.
AU - Lukyanenko, A V
AU - Bondarev, I A
AU - Rautskii, M V
AU - Baron, F.A.
AU - Smolyarova, T E
AU - Yakovlev, I.A.
AU - Varnakov, S. N.
AU - Ovchinnikov, S. G.
AU - Volkov, N.V.
PY - 2018
DA - 2018/12/27
PB - Pleiades Publishing
SP - 1875-1878
IS - 14
VL - 52
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2018_Tarasov,
author = {A.S. Tarasov and A V Lukyanenko and I A Bondarev and M V Rautskii and F.A. Baron and T E Smolyarova and I.A. Yakovlev and S. N. Varnakov and S. G. Ovchinnikov and N.V. Volkov},
title = {Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices},
journal = {Semiconductors},
year = {2018},
volume = {52},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/S1063782618140312},
number = {14},
pages = {1875--1878},
doi = {10.1134/S1063782618140312}
}
Cite this
MLA
Copy
Tarasov, A.S., et al. “Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices.” Semiconductors, vol. 52, no. 14, Dec. 2018, pp. 1875-1878. https://doi.org/10.1134/S1063782618140312.
Profiles