Pleiades Publishing
Semiconductors
,  volume 53 ,  issue 14 ,  pages 1964-1966

Magnetoimpedance Effect in a SOI-Based Structure

Publication type: Journal Article
Publication date: 2019-12-23
Pleiades Publishing
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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GOST |
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GOST Copy
Smolyakov D. A. et al. Magnetoimpedance Effect in a SOI-Based Structure // Semiconductors. 2019. Vol. 53. No. 14. pp. 1964-1966.
GOST all authors (up to 50) Copy
Smolyakov D. A., Tarasov A., Yakovlev I., Volochaev M. N. Magnetoimpedance Effect in a SOI-Based Structure // Semiconductors. 2019. Vol. 53. No. 14. pp. 1964-1966.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S1063782619140215
UR - https://doi.org/10.1134/S1063782619140215
TI - Magnetoimpedance Effect in a SOI-Based Structure
T2 - Semiconductors
AU - Smolyakov, D A
AU - Tarasov, A.S.
AU - Yakovlev, I.A.
AU - Volochaev, M N
PY - 2019
DA - 2019/12/23
PB - Pleiades Publishing
SP - 1964-1966
IS - 14
VL - 53
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2019_Smolyakov,
author = {D A Smolyakov and A.S. Tarasov and I.A. Yakovlev and M N Volochaev},
title = {Magnetoimpedance Effect in a SOI-Based Structure},
journal = {Semiconductors},
year = {2019},
volume = {53},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/S1063782619140215},
number = {14},
pages = {1964--1966},
doi = {10.1134/S1063782619140215}
}
MLA
Cite this
MLA Copy
Smolyakov, D. A., et al. “Magnetoimpedance Effect in a SOI-Based Structure.” Semiconductors, vol. 53, no. 14, Dec. 2019, pp. 1964-1966. https://doi.org/10.1134/S1063782619140215.