volume 53 issue 14 pages 1964-1966

Magnetoimpedance Effect in a SOI-Based Structure

Publication typeJournal Article
Publication date2019-12-23
scimago Q4
wos Q4
SJR0.154
CiteScore0.9
Impact factor0.6
ISSN10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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GOST Copy
Smolyakov D. A. et al. Magnetoimpedance Effect in a SOI-Based Structure // Semiconductors. 2019. Vol. 53. No. 14. pp. 1964-1966.
GOST all authors (up to 50) Copy
Smolyakov D. A., Tarasov A., Yakovlev I., Volochaev M. N. Magnetoimpedance Effect in a SOI-Based Structure // Semiconductors. 2019. Vol. 53. No. 14. pp. 1964-1966.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S1063782619140215
UR - https://doi.org/10.1134/S1063782619140215
TI - Magnetoimpedance Effect in a SOI-Based Structure
T2 - Semiconductors
AU - Smolyakov, D A
AU - Tarasov, A.S.
AU - Yakovlev, I.A.
AU - Volochaev, M N
PY - 2019
DA - 2019/12/23
PB - Pleiades Publishing
SP - 1964-1966
IS - 14
VL - 53
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2019_Smolyakov,
author = {D A Smolyakov and A.S. Tarasov and I.A. Yakovlev and M N Volochaev},
title = {Magnetoimpedance Effect in a SOI-Based Structure},
journal = {Semiconductors},
year = {2019},
volume = {53},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/S1063782619140215},
number = {14},
pages = {1964--1966},
doi = {10.1134/S1063782619140215}
}
MLA
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MLA Copy
Smolyakov, D. A., et al. “Magnetoimpedance Effect in a SOI-Based Structure.” Semiconductors, vol. 53, no. 14, Dec. 2019, pp. 1964-1966. https://doi.org/10.1134/S1063782619140215.