Pleiades Publishing
Technical Physics Letters
,  volume 46 ,  issue 7 ,  pages 665-668

Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect

Publication type: Journal Article
Publication date: 2020-07-01
Pleiades Publishing
scimago Q3
wos Q4
SJR: 0.215
CiteScore: 1.1
Impact factor: 0.9
ISSN: 10637850, 10906533, 17267471
Physics and Astronomy (miscellaneous)
Abstract
The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.
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GOST Copy
Tarasov A. et al. Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect // Technical Physics Letters. 2020. Vol. 46. No. 7. pp. 665-668.
GOST all authors (up to 50) Copy
Tarasov A., Lukyanenko A. V., Bondarev I. A., Yakovlev I., Varnakov S. N., Ovchinnikov S. G., Volkov N. Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect // Technical Physics Letters. 2020. Vol. 46. No. 7. pp. 665-668.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S1063785020070135
UR - https://doi.org/10.1134/S1063785020070135
TI - Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect
T2 - Technical Physics Letters
AU - Tarasov, A.S.
AU - Lukyanenko, A V
AU - Bondarev, I A
AU - Yakovlev, I.A.
AU - Varnakov, S. N.
AU - Ovchinnikov, S. G.
AU - Volkov, N.V.
PY - 2020
DA - 2020/07/01
PB - Pleiades Publishing
SP - 665-668
IS - 7
VL - 46
SN - 1063-7850
SN - 1090-6533
SN - 1726-7471
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2020_Tarasov,
author = {A.S. Tarasov and A V Lukyanenko and I A Bondarev and I.A. Yakovlev and S. N. Varnakov and S. G. Ovchinnikov and N.V. Volkov},
title = {Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect},
journal = {Technical Physics Letters},
year = {2020},
volume = {46},
publisher = {Pleiades Publishing},
month = {jul},
url = {https://doi.org/10.1134/S1063785020070135},
number = {7},
pages = {665--668},
doi = {10.1134/S1063785020070135}
}
MLA
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MLA Copy
Tarasov, A.S., et al. “Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect.” Technical Physics Letters, vol. 46, no. 7, Jul. 2020, pp. 665-668. https://doi.org/10.1134/S1063785020070135.